Microstructures and strain relaxation in modulation-doped AlxGa1-xN/GaN heterostructures
文献类型：期刊论文
| 作者 | Tan, WS; Shen, B; Sha, H; Cai, HL; Wu, XS; Zheng, YD; Jiang, SS; Zheng, WL ; Jia, QJ; He, Q
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| 刊名 | INTERNATIONAL JOURNAL OF MODERN PHYSICS B
 |
| 出版日期 | 2004 |
| 卷号 | 18期号:7页码:989-998 |
| 关键词 | high resolution X-ray diffraction metal organic chemical vapor deposition reciprocal space mapping semiconducting III-V nitride strain relaxation relaxation line model |
| 通讯作者 | Nanjing Univ Sci & Technol, Dept Appl Phys, Nanjing 210094, Peoples R China ; Nanjing Univ, Dept Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Beijing 1000039, Peoples R China |
| 英文摘要 | Modulation-doped Al0.22Ga0.78N/GaN heterostructures with various thickness of Si-doped Al0.22Ga0.78N barrier (n-AlGaN) were deposited on (0001)-oriented sapphire (alpha-Al2O3) by atmosphere-pressure metal-organic chemical vapor deposition (MOCVD). The reciprocal space mappings (RSMs) of symmetric reflection (0002) and asymmetric reflection (10714) were measured by means of the high resolution X-ray diffraction (HRXRD). The results indicate that the microstructures and the strain status of the n-AlGaN barrier correlate to those of the underlying i-GaN layer. The strained n-AlGaN barrier starts to relax when its thickness is 75 nm. It is found that there exists an "abnormal" relaxation state (the strain parameter gamma > 1) in modulation-doped Al0.22Ga0.78N/GaN heterostructures, which maybe results from-the internal defects in Al0.22Ga0.78N barrier and the strain relaxation status at the i-GaN/alpha-Al2O3 interfaces. |
| 学科主题 | Physics |
| 类目[WOS] | Physics, Applied ; Physics, Condensed Matter ; Physics, Mathematical |
| 研究领域[WOS] | Physics |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000222288100004 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/238849]  |
| 专题 | 高能物理研究所_多学科研究中心 中国科学院高能物理研究所_人力资源处 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Tan, WS,Shen, B,Sha, H,et al. Microstructures and strain relaxation in modulation-doped AlxGa1-xN/GaN heterostructures[J]. INTERNATIONAL JOURNAL OF MODERN PHYSICS B,2004,18(7):989-998. |
| APA | Tan, WS.,Shen, B.,Sha, H.,Cai, HL.,Wu, XS.,...&何庆.(2004).Microstructures and strain relaxation in modulation-doped AlxGa1-xN/GaN heterostructures.INTERNATIONAL JOURNAL OF MODERN PHYSICS B,18(7),989-998. |
| MLA | Tan, WS,et al."Microstructures and strain relaxation in modulation-doped AlxGa1-xN/GaN heterostructures".INTERNATIONAL JOURNAL OF MODERN PHYSICS B 18.7(2004):989-998. |
入库方式： OAI收割
来源：高能物理研究所
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