中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands

文献类型:期刊论文

作者Wei, TB; Kong, QF; Wang, JX; Li, J; Zeng, YP; Wang, GH; Li, JM; Liao, YX; Yi, FT; Liao YX(廖元勋)
刊名OPTICS EXPRESS
出版日期2011
卷号19期号:2页码:1065-1071
通讯作者[Wei, Tongbo ; Kong, Qingfeng ; Wang, Junxi ; Li, Jing ; Zeng, Yiping ; Wang, Guohong ; Li, Jinmin] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China ; [Liao, Yuanxun ; Yi, Futing] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
英文摘要InGaN-based light emitting diodes (LEDs) with a top nano-roughened p-GaN surface are fabricated using self-assembled CsCl nano-islands as etch masks. Following formation of hemispherical GaN nano-island arrays, electroluminescence (EL) spectra of roughened LEDs display an obvious redshift due to partial compression release in quantum wells through Inductively Coupled Plasma (ICP) etching. At a 350-mA current, the enhancement of light output power of LEDs subjected to ICP treatment with durations of 50, 150 and 250 sec compared with conventional LED have been determined to be 9.2, 70.6, and 42.3%, respectively. Additionally, the extraction enhancement factor can be further improved by increasing the size of CsCl nano-island. The economic and rapid method puts forward great potential for high performance lighting devices. (C) 2011 Optical Society of America
学科主题Optics
类目[WOS]Optics
研究领域[WOS]Optics
原文出处SCI
语种英语
WOS记录号WOS:000286314600066
源URL[http://ir.ihep.ac.cn/handle/311005/238985]  
专题高能物理研究所_多学科研究中心
中国科学院高能物理研究所_中国散裂中子源
作者单位中国科学院高能物理研究所
推荐引用方式
GB/T 7714
Wei, TB,Kong, QF,Wang, JX,et al. Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands[J]. OPTICS EXPRESS,2011,19(2):1065-1071.
APA Wei, TB.,Kong, QF.,Wang, JX.,Li, J.,Zeng, YP.,...&伊福廷.(2011).Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands.OPTICS EXPRESS,19(2),1065-1071.
MLA Wei, TB,et al."Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands".OPTICS EXPRESS 19.2(2011):1065-1071.

入库方式: OAI收割

来源:高能物理研究所

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