Basal plane bending of 6H-SiC single crystals observed by synchrotron radiation X-ray topography
文献类型：期刊论文
| 作者 | Ning, LN; Hu, XB; Huang WX(黄万霞) ; Yuan QX(袁清习); Wang, YM; Xu, XG; Gao, YQ; Peng, Y; Chen, XF; Huang, WX
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| 刊名 | JOURNAL OF APPLIED CRYSTALLOGRAPHY
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| 出版日期 | 2009 |
| 卷号 | 42页码:1068-1072 |
| 通讯作者 | [Ning, Lina ; Hu, Xiaobo ; Wang, Yingmin ; Xu, Xiangang ; Gao, Yuqiang ; Peng, Yan ; Chen, Xiufang] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China ; [Ning, Lina] Jiaxing Univ, Mech & Elect Engn Coll, Jiaxing 314000, Peoples R China ; [Huang, Wanxia ; Yuan, Qingxi] Inst High Energy Phys, Beijing Synchrotron Radiat Lab, Beijing 100039, Peoples R China |
| 英文摘要 | Basal plane bending is a structural defect in SiC single crystals caused mainly by the thermal mismatch between seed and holder, which deteriorates the quality of the wafers and blocks their applications. In this paper, basal plane bending was detected by high-resolution X-ray diffractometry (HRXRD) and transmission synchrotron white-beam X-ray topography (SWBXT). HRXRD reveals that the (0001) Si face is a concave sphere and SWBXT shows that the shapes of the Laue spots are different from that of the cross section of the synchrotron radiation beam. On the basis of a spherical curvature model for a (0001) 6H-SiC single crystal, the shapes of the Laue spots were simulated. The results are in good agreement with the experimental observations. Thus, SWBXT is an effective method for detecting basal plane bending. |
| 学科主题 | Crystallography |
| 类目[WOS] | Crystallography |
| 研究领域[WOS] | Crystallography |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000271895700013 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/238988]  |
| 专题 | 高能物理研究所_多学科研究中心 高能物理研究所_实验物理中心 高能物理研究所_计算中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Ning, LN,Hu, XB,Huang WX,et al. Basal plane bending of 6H-SiC single crystals observed by synchrotron radiation X-ray topography[J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY,2009,42:1068-1072. |
| APA | Ning, LN.,Hu, XB.,黄万霞.,袁清习.,Wang, YM.,...&Yuan, QX.(2009).Basal plane bending of 6H-SiC single crystals observed by synchrotron radiation X-ray topography.JOURNAL OF APPLIED CRYSTALLOGRAPHY,42,1068-1072. |
| MLA | Ning, LN,et al."Basal plane bending of 6H-SiC single crystals observed by synchrotron radiation X-ray topography".JOURNAL OF APPLIED CRYSTALLOGRAPHY 42(2009):1068-1072. |
入库方式： OAI收割
来源：高能物理研究所
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