Photoelectron diffraction study on the polarity of GaN surface
文献类型：期刊论文
| 作者 | Xu, PS; Deng, R; Pan, HB; Xu, FQ; Xie, CK; Li, YH ; Liu, FQ; Yibulaxin, K; Liu FQ(刘凤琴); Kui RX(奎热西)
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| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2004 |
| 卷号 | 53期号:4页码:1171-1176 |
| 关键词 | GaN surface polarity photoelectron diffraction |
| 通讯作者 | Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Radiat Lab, Beijing 100039, Peoples R China |
| 英文摘要 | We have obtained the photoelectron diffraction curves from (10 (1) over bar0) and (11 (2) over bar0) crystal planes on GaN (0001) surface by using a polar scan mode of x-ray photoelectron diffraction (XPD). On the basis of principle of "forward focusing" of XPD, we have determined that its polarity is Ga termination. The polarity of GaN (0001) surface is also studied by using, energy dependence photoelectron diffraction called angle-resolved photoemission extended fine structure, as well as the calculation of multiple scattering cluster models, which confirmed that its polarity is Ga termination. |
| 学科主题 | Physics |
| 类目[WOS] | Physics, Multidisciplinary |
| 研究领域[WOS] | Physics |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000220534100036 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/239138]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Xu, PS,Deng, R,Pan, HB,et al. Photoelectron diffraction study on the polarity of GaN surface[J]. ACTA PHYSICA SINICA,2004,53(4):1171-1176. |
| APA | Xu, PS.,Deng, R.,Pan, HB.,Xu, FQ.,Xie, CK.,...&奎热西.(2004).Photoelectron diffraction study on the polarity of GaN surface.ACTA PHYSICA SINICA,53(4),1171-1176. |
| MLA | Xu, PS,et al."Photoelectron diffraction study on the polarity of GaN surface".ACTA PHYSICA SINICA 53.4(2004):1171-1176. |
入库方式： OAI收割
来源：高能物理研究所
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