Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates
文献类型：期刊论文
| 作者 | Wu, JJ; Li, JM ; Cong, GW; Wei, HY; Zhang, PF; Hu, WG; Liu, XL; Zhu, QS; Wang, ZG; Jia, QJ
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| 刊名 | NANOTECHNOLOGY
 |
| 出版日期 | 2006 |
| 卷号 | 17期号:5页码:1251-1254 |
| 通讯作者 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China |
| 英文摘要 | The temperature dependence of the formation of nano-scale indium clusters in InAlGaN quaternary alloys, which are grown by metalorganic chemical vapour deposition on GaN/Si(111) epilayers, is investigated. Firm evidence is provided to support the existence of phase separation, or nano-scale In-rich clusters, by the combined results of high-resolution transmission electron microscopy (HRTEM), high-resolution x-ray diffraction (HRXRD) and micro-Raman spectra. The results of HRXRD and Raman spectra indicate that the degree of phase separation is strong and the number of In clusters in the InAlGaN layers on silicon substrate is higher at lower growth temperatures than that at higher growth temperatures, which limits the In and Al incorporated into the InAlGaN quaternary alloys. The detailed mechanism of luminescence in this system is studied by low temperature photoluminescence (LT-PL). We conclude that the ultraviolet (UV) emission observed in the quaternary InAlGaN alloys arises from the matrix of a random alloy, and the second emission peak in the blue-green region results from the nano-scale indium clusters. |
| 学科主题 | Science & Technology - Other Topics; Materials Science; Physics |
| 类目[WOS] | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied |
| 研究领域[WOS] | Science & Technology - Other Topics ; Materials Science ; Physics |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000236496400023 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/239228]  |
| 专题 | 高能物理研究所_多学科研究中心 中国科学院高能物理研究所_中国散裂中子源 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Wu, JJ,Li, JM,Cong, GW,et al. Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates[J]. NANOTECHNOLOGY,2006,17(5):1251-1254. |
| APA | Wu, JJ.,Li, JM.,Cong, GW.,Wei, HY.,Zhang, PF.,...&郭丽萍.(2006).Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates.NANOTECHNOLOGY,17(5),1251-1254. |
| MLA | Wu, JJ,et al."Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates".NANOTECHNOLOGY 17.5(2006):1251-1254. |
入库方式： OAI收割
来源：高能物理研究所
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