Research on AlInGaN Quaternary Alloys as MQW Barriers in GaN-Based Laser Diodes
文献类型：期刊论文
| 作者 | Chen, WH; Liao, H; Hu, XD; Li, R ; Jia, QJ; Jin, YH; Du, WM; Yang, ZJ; Zhang, GY; Jia QJ(贾全杰)
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| 刊名 | SPECTROSCOPY AND SPECTRAL ANALYSIS
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| 出版日期 | 2009 |
| 卷号 | 29期号:6页码:1441-1444 |
| 关键词 | GaN-based LD Multi-quantum-well (MQW) AlInGaN Barrier material |
| 通讯作者 | [Jin Yuan-hao ; Du Wei-min] Peking Univ, Sch Phys, Inst Modern Opt, Beijing 100871, Peoples R China ; [Chen Wei-hua ; Liao Hui ; Hu Xiao-dong ; Li Rui ; Yang Zhi-jian ; Zhang Guo-yi] Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China ; [Jia Quan-jie] Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China |
| 英文摘要 | InGaN/GaN, InGaN/InGaN and InGaN/AlInGaN multi-quantum-well (MQW) laser diodes (LDs) were grown on (0001) sapphire substrate by metalorganic chemical vapor deposition (MOCVD). The GaN (0002) synchrotron X-ray diffraction (XRD), electroluminescence (EL) and optical power-current (L-I) measurement reveal that AlInGaN quaternary alloys as barriers in MQWs can improve the crystal quality, optical emission performance, threshold current and slope efficiency of the laser diode structure to a large extent compared with other barriers. The relevant mechanisms are that: 1. The Al component increases the barrier height of the MQWs so that more current carriers will be caught in. 2. The In component counteracts the strain in the MQWs that decreases the dislocations and defects, thereby the nonradiative recombination centers are decreased. 3. The In component decreases the piezoelectric electric field that makes the electrons and the holes recombine more easily. |
| 学科主题 | Spectroscopy |
| 类目[WOS] | Spectroscopy |
| 研究领域[WOS] | Spectroscopy |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000266681400001 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/239355]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Chen, WH,Liao, H,Hu, XD,et al. Research on AlInGaN Quaternary Alloys as MQW Barriers in GaN-Based Laser Diodes[J]. SPECTROSCOPY AND SPECTRAL ANALYSIS,2009,29(6):1441-1444. |
| APA | Chen, WH.,Liao, H.,Hu, XD.,Li, R.,Jia, QJ.,...&贾全杰.(2009).Research on AlInGaN Quaternary Alloys as MQW Barriers in GaN-Based Laser Diodes.SPECTROSCOPY AND SPECTRAL ANALYSIS,29(6),1441-1444. |
| MLA | Chen, WH,et al."Research on AlInGaN Quaternary Alloys as MQW Barriers in GaN-Based Laser Diodes".SPECTROSCOPY AND SPECTRAL ANALYSIS 29.6(2009):1441-1444. |
入库方式： OAI收割
来源：高能物理研究所
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