Microstructure of epitaxial Er2O3 thin film on oxidized Si(111) substrate
文献类型：期刊论文
| 作者 | Xue XY(薛宪营); Wang YZ(王玉柱); Jia QJ(贾全杰) ; Wang Y(王勇); Chen Y(陈雨); Jiang XM(姜晓明); Xue, XY; Wang, YZ; Jia, QJ; Wang, Y
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| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2007 |
| 卷号 | 24期号:6页码:1649-1652 |
| 通讯作者 | Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China ; Fudan Univ, Surface Phys Lab, Shanghai 200433, Peoples R China |
| 英文摘要 | Er2O3 thin films are grown on oxidized Si (111) substrates by molecular beam epitaxy, The sample grown under optimized condition is characterized in its microstructure, surface morphology and thickness using grazing incidence x-ray diffraction (GIXRD), atomic force morphology and x-ray reflectivity, GIXRD measurements reveal that the Er2O3 thin film is a mosaic of single-crystal domains. The interplanar spacing d in-plane residual strain tensor epsilon(parallel to) and the strain relaxation degree xi are calculated. The Poisson ratio mu obtained by conventional x-ray diffraction is in good agreement with that of the bulk Er2O3. In-plane strains in three sets of planes, i.e. (440), (404), and (044), are isotropic. |
| 学科主题 | Physics |
| 类目[WOS] | Physics, Multidisciplinary |
| 研究领域[WOS] | Physics |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000247045400060 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/239455]  |
| 专题 | 高能物理研究所_多学科研究中心 高能物理研究所_实验物理中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Xue XY,Wang YZ,Jia QJ,et al. Microstructure of epitaxial Er2O3 thin film on oxidized Si(111) substrate[J]. CHINESE PHYSICS LETTERS,2007,24(6):1649-1652. |
| APA | 薛宪营.,王玉柱.,贾全杰.,王勇.,陈雨.,...&Zui-Min, J.(2007).Microstructure of epitaxial Er2O3 thin film on oxidized Si(111) substrate.CHINESE PHYSICS LETTERS,24(6),1649-1652. |
| MLA | 薛宪营,et al."Microstructure of epitaxial Er2O3 thin film on oxidized Si(111) substrate".CHINESE PHYSICS LETTERS 24.6(2007):1649-1652. |
入库方式： OAI收割
来源：高能物理研究所
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