Investigation of the acceptor and donor in fast neutron irradiated Czochralski silicon
文献类型：期刊论文
| 作者 | Li, YX ; Yang, S; Chen, GF; Ma, QY; Niu, PJ; Chen, DF; Li, HT; Wang, BY; Wang BY(王宝义)
|
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2005 |
| 卷号 | 54期号:4页码:1783-1787 |
| 关键词 | fast neutron irradiation vacancy-type defects acceptor donor |
| 通讯作者 | Hebei Univ Technol, Sch Mat Sci & Engn, Tianjin 300130, Peoples R China ; Tianjin Polytech Inst, Sch Informat & Commun, Tianjin 300160, Peoples R China ; China Inst Atom Energy, Beijing 102413, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China |
| 英文摘要 | Variations of the irradiated defects, resistivity, carrier mobility ratio and carrier concentration in high-dose neutron-irradiated n-type Czoehralski silicon have been investigated by means of Fourier transform infrared spectrometer, positron annihilation spectroscopy and Hall effect. After irradiated with fast neutron, the sample transformed from n to p-type. Two types of acceptor centers that contribute to the V2O2, V2O, VO2, V-O-V and V-4 -type defects will appear after annealing at temperature of 450 and 600 degrees C, respectively. After annealing at temperatures above 650 degrees C, with the elimination of acceptors, the carrier mobility ratio and the carrier-type began to recover and a type of donor related to the irradiated defects will appear. The effective annealing temperature is 750 degrees C at which the donor is formed, and annealing above 900 degrees C for I It will eliminate the donor. |
| 学科主题 | Physics |
| 类目[WOS] | Physics, Multidisciplinary |
| 研究领域[WOS] | Physics |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000228510600056 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/239523]  |
| 专题 | 高能物理研究所_多学科研究中心 高能物理研究所_粒子天体物理中心 中国科学院高能物理研究所_中国散裂中子源 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Li, YX,Yang, S,Chen, GF,et al. Investigation of the acceptor and donor in fast neutron irradiated Czochralski silicon[J]. ACTA PHYSICA SINICA,2005,54(4):1783-1787. |
| APA | Li, YX.,Yang, S.,Chen, GF.,Ma, QY.,Niu, PJ.,...&王宝义.(2005).Investigation of the acceptor and donor in fast neutron irradiated Czochralski silicon.ACTA PHYSICA SINICA,54(4),1783-1787. |
| MLA | Li, YX,et al."Investigation of the acceptor and donor in fast neutron irradiated Czochralski silicon".ACTA PHYSICA SINICA 54.4(2005):1783-1787. |
入库方式： OAI收割
来源：高能物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。