中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Influence of annealing conditions of ZnO films on the properties of ZnS films prepared by sulfurizing ZnO films

文献类型:期刊论文

作者Wang BY(王宝义); Zhang RG(张仁刚); Zhang H(张辉); Wan DY(万冬云); Wei L(魏龙); Wang, BY; Zhang, RG; Hui, Z; Wan, DY; Long, W
刊名ACTA PHYSICA SINICA
出版日期2005
卷号54期号:4页码:1874-1878
关键词ZnS films magnetron sputtering sulfidation of ZnO solar cells
通讯作者Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
英文摘要ZnS films are prepared on glass and quartz substrates by suffidation of the ZnO films which are deposited via reactive magnetron sputtering and annealed under various conditions. The sulfurized films are characterized by using x-ray diffraction, scanning electron microscope and UV-VIS spectrometer. The results show that the crystalline structure and optical properties of the sutfurized films depend on the annealing conditions. ZnO films annealed in vacuum and pure O-2 atmosphere, respectively, are converted partially to the hexagonal ZnS, while the annealed ZnO films in air and pure N-2, respectively, are converted totally to ZnS. Also the ZnS films produced by sulfurizing the annealed ZnO films in air and pure N-2, respectively, have a high optical transmittance of about 80% at the wavelength of 400-800 nm, with the band-gap energies of 3.66 and 3.61 eV, respectively.
学科主题Physics
类目[WOS]Physics, Multidisciplinary
研究领域[WOS]Physics
原文出处SCI
语种英语
WOS记录号WOS:000228510600073
源URL[http://ir.ihep.ac.cn/handle/311005/239562]  
专题高能物理研究所_多学科研究中心
中国科学院高能物理研究所_中国散裂中子源
作者单位中国科学院高能物理研究所
推荐引用方式
GB/T 7714
Wang BY,Zhang RG,Zhang H,et al. Influence of annealing conditions of ZnO films on the properties of ZnS films prepared by sulfurizing ZnO films[J]. ACTA PHYSICA SINICA,2005,54(4):1874-1878.
APA 王宝义.,张仁刚.,张辉.,万冬云.,魏龙.,...&Long, W.(2005).Influence of annealing conditions of ZnO films on the properties of ZnS films prepared by sulfurizing ZnO films.ACTA PHYSICA SINICA,54(4),1874-1878.
MLA 王宝义,et al."Influence of annealing conditions of ZnO films on the properties of ZnS films prepared by sulfurizing ZnO films".ACTA PHYSICA SINICA 54.4(2005):1874-1878.

入库方式: OAI收割

来源:高能物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。