Influence of annealing conditions of ZnO films on the properties of ZnS films prepared by sulfurizing ZnO films
文献类型:期刊论文
作者 | Wang BY(王宝义)![]() ![]() ![]() ![]() |
刊名 | ACTA PHYSICA SINICA
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出版日期 | 2005 |
卷号 | 54期号:4页码:1874-1878 |
关键词 | ZnS films magnetron sputtering sulfidation of ZnO solar cells |
通讯作者 | Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China |
英文摘要 | ZnS films are prepared on glass and quartz substrates by suffidation of the ZnO films which are deposited via reactive magnetron sputtering and annealed under various conditions. The sulfurized films are characterized by using x-ray diffraction, scanning electron microscope and UV-VIS spectrometer. The results show that the crystalline structure and optical properties of the sutfurized films depend on the annealing conditions. ZnO films annealed in vacuum and pure O-2 atmosphere, respectively, are converted partially to the hexagonal ZnS, while the annealed ZnO films in air and pure N-2, respectively, are converted totally to ZnS. Also the ZnS films produced by sulfurizing the annealed ZnO films in air and pure N-2, respectively, have a high optical transmittance of about 80% at the wavelength of 400-800 nm, with the band-gap energies of 3.66 and 3.61 eV, respectively. |
学科主题 | Physics |
类目[WOS] | Physics, Multidisciplinary |
研究领域[WOS] | Physics |
原文出处 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000228510600073 |
源URL | [http://ir.ihep.ac.cn/handle/311005/239562] ![]() |
专题 | 高能物理研究所_多学科研究中心 中国科学院高能物理研究所_中国散裂中子源 |
作者单位 | 中国科学院高能物理研究所 |
推荐引用方式 GB/T 7714 | Wang BY,Zhang RG,Zhang H,et al. Influence of annealing conditions of ZnO films on the properties of ZnS films prepared by sulfurizing ZnO films[J]. ACTA PHYSICA SINICA,2005,54(4):1874-1878. |
APA | 王宝义.,张仁刚.,张辉.,万冬云.,魏龙.,...&Long, W.(2005).Influence of annealing conditions of ZnO films on the properties of ZnS films prepared by sulfurizing ZnO films.ACTA PHYSICA SINICA,54(4),1874-1878. |
MLA | 王宝义,et al."Influence of annealing conditions of ZnO films on the properties of ZnS films prepared by sulfurizing ZnO films".ACTA PHYSICA SINICA 54.4(2005):1874-1878. |
入库方式: OAI收割
来源:高能物理研究所
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