Microstructural features of DC sputtered vanadium oxide thin films
文献类型：期刊论文
| 作者 | Pan MX(潘梦霄); Cao XZ(曹兴忠) ; Wang BY(王宝义); Ma CX(马创新); Zhou CL(周春兰); Wei L(魏龙); Pan, MX; Cao, XZ; Li, YX; Wang, BY
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| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2004 |
| 卷号 | 53期号:6页码:1956-1960 |
| 关键词 | microstructure thin films of vanadium oxides preferred orientation DC magnetron sputtering |
| 通讯作者 | Chinese Acad Sci, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100039, Peoples R China ; Hebei Univ Technol, Inst Mat Sci & Engn, Tianjin 300130, Peoples R China ; Lanzhou Univ, Key Lab Magnetism & Magnet Mat, Minist Educ, Lanzhou 730000, Peoples R China |
| 英文摘要 | V2O5 thin films with a preferred orientation were deposited on Si (100) substrate by reactive dc magnetron sputtering. The surface morphology and structural features were studied by XRD, SEM and FTIR to ensure the growth of V2O5 films. These investigations revealed that the chemical composition and the orientation of the films were affected by the oxygen partial pressure. Nano-grain V2O5 films can be grown with a layered structure at oxygen partial pressure of 0.4Pa. V2O5 film could be converted to (001) oriented VO2 film after vacuum annealing process. |
| 学科主题 | Physics |
| 类目[WOS] | Physics, Multidisciplinary |
| 研究领域[WOS] | Physics |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000221946200063 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/239594]  |
| 专题 | 高能物理研究所_核技术应用研究中心 高能物理研究所_多学科研究中心 中国科学院高能物理研究所_中国散裂中子源 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Pan MX,Cao XZ,Wang BY,et al. Microstructural features of DC sputtered vanadium oxide thin films[J]. ACTA PHYSICA SINICA,2004,53(6):1956-1960. |
| APA | 潘梦霄.,曹兴忠.,王宝义.,马创新.,周春兰.,...&Wei, L.(2004).Microstructural features of DC sputtered vanadium oxide thin films.ACTA PHYSICA SINICA,53(6),1956-1960. |
| MLA | 潘梦霄,et al."Microstructural features of DC sputtered vanadium oxide thin films".ACTA PHYSICA SINICA 53.6(2004):1956-1960. |
入库方式： OAI收割
来源：高能物理研究所
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