Rapid annealing study of neutron-irradiated GaAs by Rutherford backscattering spectrometry/channeling
文献类型：期刊论文
| 作者 | Liu, J; Wang, PX |
| 刊名 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
 |
| 出版日期 | 1999 |
| 卷号 | 17期号:5页码:2040-2044 |
| 通讯作者 | Chinese Acad Sci, Inst High Energy Phys, Beijing 100080, Peoples R China ; Univ Sci & Technol Beijing, Dept Mat Phys, Beijing 100083, Peoples R China |
| 英文摘要 | The behavior of GaAs crystals irradiated with neutrons of various fluence has been investigated using Rutherford backscattering spectrometry/channeling. The results show that the neutron irradiation (from 10(14) to 10(17) n/cm(2)) has little effect on the critical angle (Psi(1/2)). During annealing, the rate of lattice reordering increases with the temperature rising. For the fluence of 10(15) n/cm2, the activation energy of defect annihilation E-1 = 0.35 eV, which may be attributed to the recombination of vacancies with migrating interstitials. The activation energy E-2 = 0.13 eV for the neutron fluence of 10(17) n/cm(2) may. probably, correspond to the recombination of vacancies with interstitials in the most neighborhoods. (C) 1999 American Vacuum Society. [S0734-211X(99)00705-2]. |
| 学科主题 | Engineering; Science & Technology - Other Topics; Physics |
| 类目[WOS] | Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Physics, Applied |
| 研究领域[WOS] | Engineering ; Science & Technology - Other Topics ; Physics |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000083129900025 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/239631]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Liu, J,Wang, PX. Rapid annealing study of neutron-irradiated GaAs by Rutherford backscattering spectrometry/channeling[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,1999,17(5):2040-2044. |
| APA | Liu, J,&Wang, PX.(1999).Rapid annealing study of neutron-irradiated GaAs by Rutherford backscattering spectrometry/channeling.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,17(5),2040-2044. |
| MLA | Liu, J,et al."Rapid annealing study of neutron-irradiated GaAs by Rutherford backscattering spectrometry/channeling".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 17.5(1999):2040-2044. |
入库方式： OAI收割
来源：高能物理研究所
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