Studies on electronic structure of GaN(0001) surface
文献类型：期刊论文
| 作者 | Xie, CK; Xu, FQ; Deng, R; Xu, PS; Liu, FQ; Yibulaxin, K; Liu FQ(刘凤琴); Kui RX(奎热西)
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| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2002 |
| 卷号 | 51期号:11页码:2606-2611 |
| 关键词 | GaN ARPES FPLAPW electronic structure |
| 通讯作者 | Univ Sci & Technol China, Struct Res Lab, Hefei 230026, Peoples R China ; Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China ; Acad Sinica, Inst High Energy Phys, Beijing 100039, Peoples R China |
| 英文摘要 | An electronic structure investigation on GaN(0001) is reported: We employ a full-potential linearized augmented plane-wave(FPLAPW) approach to calculate the partial density of states, which is in agreement with previous experimental results. The effects of the Ga3d semicore levels on the electronic structure of GaN are discussed. The valence-electronic structure of the wurtzite GaN(0001) surface is investigated using synchrotron radiation excited angle-resolved photoemission spectroscopy. The bulk bands dispersion along FA direction in the Brillouin zones is measured using normal-emission spectra by changing photon-energy. The band structure derived from our experimental data is compared well with the results of our FPLAPW calculation. Furthermore, off-normal emission spectra are also measured along the GammaX and GammaM directions. Two surface states are identified, and their dispersions are characterized. |
| 学科主题 | Physics |
| 类目[WOS] | Physics, Multidisciplinary |
| 研究领域[WOS] | Physics |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000179220800035 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/239791]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Xie, CK,Xu, FQ,Deng, R,et al. Studies on electronic structure of GaN(0001) surface[J]. ACTA PHYSICA SINICA,2002,51(11):2606-2611. |
| APA | Xie, CK.,Xu, FQ.,Deng, R.,Xu, PS.,Liu, FQ.,...&奎热西.(2002).Studies on electronic structure of GaN(0001) surface.ACTA PHYSICA SINICA,51(11),2606-2611. |
| MLA | Xie, CK,et al."Studies on electronic structure of GaN(0001) surface".ACTA PHYSICA SINICA 51.11(2002):2606-2611. |
入库方式： OAI收割
来源：高能物理研究所
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