Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells
文献类型：期刊论文
| 作者 | Sun, Q; Zhang, JC ; Huang, Y; Chen, J; Wang, JF; Wang, H; Li, DY; Wang, YT; Zhang, SM; Yang, H
|
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2006 |
| 卷号 | 252期号:8页码:3043-3050 |
| 关键词 | nitrides multiple quantum wells cracks dislocations vacancies x-ray diffraction |
| 通讯作者 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China ; Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China ; CAS, Inst High Energy Phys, Lab Nucl Analyt Tech, Beijing 100039, Peoples R China ; CAS, Inst High Energy Phys, Beijing Synchotron Radiat Facil, Beijing 100039, Peoples R China |
| 英文摘要 | Both cracked and crack-free GaN/Al0.55Ga0.45N multiple quantum wells (MQWs) grown on GaN template by metalorganic chemical vapor deposition have been studied by triple-axis X-ray diffraction, grazing-incidence X-ray reflectivity, atomic force microscope, photoluminescence spectroscopy and low-energy positron annihilation spectroscopy. The experimental results show that cracks generation not only deteriorates the surface morphology, but also leads to a period dispersion and roughens the interfaces of MQWs. The mean density of dislocations in MQWs, determined from the average full-width at half-maximum of to-scan of each satellite peak, has been significantly enhanced by the cracks generation. Furthermore, the measurement of annihilation-line Doppler broadening reveals a higher concentration of negatively charged vacancies in the cracked MQWs. The combination of these vacancies and the high density of edge dislocations are assumed to contribute to the highly enhanced yellow luminescence in the cracked sample. (c) 2005 Elsevier B.V. All rights reserved. |
| 学科主题 | Chemistry; Materials Science; Physics |
| 类目[WOS] | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 研究领域[WOS] | Chemistry ; Materials Science ; Physics |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000235721800047 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/239860]  |
| 专题 | 高能物理研究所_多学科研究中心 高能物理研究所_实验物理中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Sun, Q,Zhang, JC,Huang, Y,et al. Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells[J]. APPLIED SURFACE SCIENCE,2006,252(8):3043-3050. |
| APA | Sun, Q.,Zhang, JC.,Huang, Y.,Chen, J.,Wang, JF.,...&贾全杰.(2006).Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells.APPLIED SURFACE SCIENCE,252(8),3043-3050. |
| MLA | Sun, Q,et al."Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells".APPLIED SURFACE SCIENCE 252.8(2006):3043-3050. |
入库方式： OAI收割
来源：高能物理研究所
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