Microstructure evolution of Ge+ implanted silicon oxide thin films upon annealing treatments
文献类型：期刊论文
| 作者 | Yu RS(于润升) ; Wang BY(王宝义); Qin XB(秦秀波); Wang QZ(王巧占); Yu, RS; Maekawa, M; Kawasuso, A; Sekiguchi, T; Wang, BY; Qin, XB
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| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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| 出版日期 | 2009 |
| 卷号 | 267期号:18页码:3097-3099 |
| 关键词 | Positron annihilation Positronium Nanocrystal Silicon oxides |
| 通讯作者 | [Yu, R. S. ; Wang, B. Y. ; Qin, X. B. ; Wang, Q. Z.] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China ; [Maekawa, M. ; Kawasuso, A.] Japan Atom Energy Agcy, Adv Sci Res Ctr, Takasaki, Gumma 3701292, Japan ; [Sekiguchi, T.] Natl Inst Mat Sci, Adv Elect Mat Ctr, Tsukuba, Ibaraki 3050047, Japan |
| 英文摘要 | The structural evolution of silicon oxide films with Ge+ implantation was traced with a positron beam equipped with positron annihilation Doppler broadening and lifetime spectrometers. Results indicate that the film structure change as a function of the annealing temperature could be divided into four stages: (I) T < 300 degrees C; (II) 300 degrees C < T <= 500 degrees C; (III) 600 degrees C <= T <= 800 degrees C; (IV) T >= 900 degrees C. In comparison with stage I, the increased positron annihilation Doppler broadening S values during stage II is ascribed to the annealing out of point defects and coalescence of intrinsic open volumes in silicon oxides. The obtained long positron lifetime and high S values without much fluctuation in stage III suggest a rather stable film structure. Further annealing above 900 degrees C brings about dramatic change of the film structure with Ge precipitation. Positron annihilation spectroscopy is thereby a sensitive probe for the diagnosis of microstructure variation of silicon oxide thin films with nano-precipitation. (C) 2009 Elsevier B.V. All rights reserved. |
| 学科主题 | Instruments & Instrumentation; Nuclear Science & Technology; Physics |
| 类目[WOS] | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics, Atomic, Molecular & Chemical ; Physics, Nuclear |
| 研究领域[WOS] | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000271349500032 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/239866]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Yu RS,Wang BY,Qin XB,et al. Microstructure evolution of Ge+ implanted silicon oxide thin films upon annealing treatments[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2009,267(18):3097-3099. |
| APA | 于润升.,王宝义.,秦秀波.,王巧占.,Yu, RS.,...&Wang, QZ.(2009).Microstructure evolution of Ge+ implanted silicon oxide thin films upon annealing treatments.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,267(18),3097-3099. |
| MLA | 于润升,et al."Microstructure evolution of Ge+ implanted silicon oxide thin films upon annealing treatments".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 267.18(2009):3097-3099. |
入库方式： OAI收割
来源：高能物理研究所
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