Study of He-induced nano-cavities as sinks of oxygen for forming silicon-on-insulator
文献类型：期刊论文
| 作者 | Li, BS ; Zhang, CH; Hao, XP; Wang, DN; Zhou, LH; Zhang, HH; Yang, YT; Zhang, LQ
|
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2008 |
| 卷号 | 17期号:10页码:3836-3840 |
| 关键词 | positron annihilation nanocavity oxygen diffusion silicon dioxide |
| 通讯作者 | [Li Bing-Sheng ; Zhang Chong-Hong ; Zhou Li-Hong ; Zhang Hong-Hua ; Yang Yi-Tao ; Zhang Li-Qing] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China ; [Hao Xiao-Peng ; Wang Dan-Ni] Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China |
| 英文摘要 | In the present work, a Cz-Silicon wafer is implanted with helium ions to produce a buried porous layer, and then thermally annealed in a dry oxygen atmosphere to make oxygen transport into the cavities. The formation of the buried oxide layer in the case of internal oxidation (ITOX) of the buried porous layer of cavities in the silicon sample is studied by positron beam annihilation (PBA). The cavities are formed by 15 keV He implantation at a fluence of 2 x 10(16) cm(-2) and followed by thermal annealing at 673 K for 30 min in vacuum. The internal oxidation is carried out at temperatures ranging from 1073 to 1473 K for 2 h in a dry oxygen atmosphere. The layered structures evolved in the silicon are detected by using the PBA and the thicknesses of their layers and nature are also investigated. It is found that rather high temperatures must be chosen to establish a sufficient flux of oxygen into the cavity layer. On the other hand high temperatures lead to coarsening the cavities and removing the cavity layer finally. |
| 学科主题 | Physics |
| 类目[WOS] | Physics, Multidisciplinary |
| 研究领域[WOS] | Physics |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000260263800049 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/239943]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Li, BS,Zhang, CH,Hao, XP,et al. Study of He-induced nano-cavities as sinks of oxygen for forming silicon-on-insulator[J]. CHINESE PHYSICS B,2008,17(10):3836-3840. |
| APA | Li, BS.,Zhang, CH.,Hao, XP.,Wang, DN.,Zhou, LH.,...&Zhang, LQ.(2008).Study of He-induced nano-cavities as sinks of oxygen for forming silicon-on-insulator.CHINESE PHYSICS B,17(10),3836-3840. |
| MLA | Li, BS,et al."Study of He-induced nano-cavities as sinks of oxygen for forming silicon-on-insulator".CHINESE PHYSICS B 17.10(2008):3836-3840. |
入库方式： OAI收割
来源：高能物理研究所
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