AU/GAAS INTERFACE ANNEALING STUDY BY POSITRON-LIFETIME SPECTROSCOPY
文献类型：期刊论文
| 作者 | SHAN, YY; PANDA, BK; FUNG, S; BELING, CD; WANG, YY ; Wang YY(王蕴玉)
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| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 1995 |
| 卷号 | 52期号:7页码:4724-4727 |
| 通讯作者 | INST HIGH ENERGY PHYS, BEIJING, PEOPLES R CHINA |
| 英文摘要 | Structural changes of annealed Au contacts on semi-insulating GaAs have been observed by conventional positron lifetime-spectroscopy in which a significant fraction of positrons are drifted from a Na-22 source to the contact by an electric field. For annealing temperatures below 200 degrees C it is found that the interface traps positrons into microvoids with a characteristic positron lifetime of 380+/-10 ps. For annealing in the range of 300 degrees C-400 degrees C a 150+/-20 ps additional component appears in the lifetime spectra that is attributed to positrons annihilating from AuGa phases at the interface. The most likely explanation for this sudden onset of the positron component in the AuGa phases is that the changes in the Gabs near surface electron chemical potential, brought about by annealing, affect the interfacial dipole in such a way as to allow a favorable potential barrier for positron penetration into the metallic phase. |
| 学科主题 | Physics |
| 类目[WOS] | Physics, Condensed Matter |
| 研究领域[WOS] | Physics |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:A1995RR50200025 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/239994]  |
| 专题 | 高能物理研究所_多学科研究中心 中国科学院高能物理研究所_中国散裂中子源 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | SHAN, YY,PANDA, BK,FUNG, S,et al. AU/GAAS INTERFACE ANNEALING STUDY BY POSITRON-LIFETIME SPECTROSCOPY[J]. PHYSICAL REVIEW B,1995,52(7):4724-4727. |
| APA | SHAN, YY,PANDA, BK,FUNG, S,BELING, CD,WANG, YY,&王蕴玉.(1995).AU/GAAS INTERFACE ANNEALING STUDY BY POSITRON-LIFETIME SPECTROSCOPY.PHYSICAL REVIEW B,52(7),4724-4727. |
| MLA | SHAN, YY,et al."AU/GAAS INTERFACE ANNEALING STUDY BY POSITRON-LIFETIME SPECTROSCOPY".PHYSICAL REVIEW B 52.7(1995):4724-4727. |
入库方式： OAI收割
来源：高能物理研究所
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