Preparation and application in p-n homojunction diode of p-type transparent conducting Ga-doped SnO2 thin films
文献类型：期刊论文
| 作者 | Yang TY(杨铁莹); Qin XB(秦秀波) ; Wang HH(王焕华); Jia QJ(贾全杰); Yu RS(于润升); Wang BY(王宝义); Wang JO(王嘉鸥); Kui RX(奎热西); Jiang XM(姜晓明); Yang, TY
|
| 刊名 | THIN SOLID FILMS
 |
| 出版日期 | 2010 |
| 卷号 | 518期号:19页码:5542-5545 |
| 关键词 | p-Type transparent conducting oxide Ga-doped SnO2 Thin films p-n homojunction diode Magnetron sputtering X-ray diffraction X-ray photoelectron spectroscopy |
| 通讯作者 | [Yang, Tieying ; Qin, Xiubo ; Wang, Huan-hua ; Jia, Quanjie ; Yu, Runsheng ; Wang, Baoyi ; Wang, Jiaou ; Ibrahim, Kurash ; Jiang, Xiaoming] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China ; [He, Qing] Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China |
| 英文摘要 | The direct preparation of p-type transparent conducting Ga-doped SnO2 thin films and their fundamental application in transparent p-n homojunction diode were realized. The films were grown in an active oxygen ambient using reactive rf magnetron sputtering without post-deposition annealing involved. This method improved the electrical properties of the films while maintaining their optical transparency. By growing a p-type thin film on commercial n-type SnO2:F-coated glass, transparent p-n homojunction diode was obtained. It exhibits a distinct current-voltage rectifying characteristic, manifesting this p-type thin film and the fabrication technology are suitable for industrial applications. (C) 2010 Elsevier B.V. All rights reserved. |
| 学科主题 | Materials Science; Physics |
| 类目[WOS] | Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 研究领域[WOS] | Materials Science ; Physics |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000279885700035 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/240037]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Yang TY,Qin XB,Wang HH,et al. Preparation and application in p-n homojunction diode of p-type transparent conducting Ga-doped SnO2 thin films[J]. THIN SOLID FILMS,2010,518(19):5542-5545. |
| APA | 杨铁莹.,秦秀波.,王焕华.,贾全杰.,于润升.,...&He, Q.(2010).Preparation and application in p-n homojunction diode of p-type transparent conducting Ga-doped SnO2 thin films.THIN SOLID FILMS,518(19),5542-5545. |
| MLA | 杨铁莹,et al."Preparation and application in p-n homojunction diode of p-type transparent conducting Ga-doped SnO2 thin films".THIN SOLID FILMS 518.19(2010):5542-5545. |
入库方式： OAI收割
来源：高能物理研究所
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