Spectroscopic ellipsometry and positron annihilation investigation of sputtered HfO2 films
文献类型：期刊论文
| 作者 | Ma, ZW; Liu, LX; Xie, YZ; Su, YR; Zhao, HT; Wang, BY ; Cao, XZ; Qin, XB; Li, J; Yang, YH
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| 刊名 | THIN SOLID FILMS
 |
| 出版日期 | 2011 |
| 卷号 | 519期号:19页码:6349-6353 |
| 关键词 | Hafnium dioxide Spectroscopic ellipsometry Positron annihilation spectroscopy Open volume defects Sputtering |
| 通讯作者 | [Ma, Z. W. ; Liu, L. X. ; Xie, Y. Z. ; Su, Y. R. ; Zhao, H. T. ; Li, J. ; Yang, Y. H. ; Xie, E. Q.] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China ; [Ma, Z. W.] Yuncheng Univ, Dept Phys & Elect Engn, Yuncheng 044000, Peoples R China ; [Wang, B. Y. ; Cao, X. Z. ; Qin, X. B.] Chinese Acad Sci, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100049, Peoples R China |
| 英文摘要 | Hafnium oxide (HfO2) films were prepared using a pulsed sputtering method and different O-2/(O-2 + Ar) ratios, deposition pressures, and sputtering powers. Spectroscopic ellipsometry (SE) and positron annihilation spectroscopy (PAS) were used to investigate the influence of the deposition parameters on the number of open volume defects (OVDs) in the HfO2 films. The results reveal that a low O-2/(O-2 + Ar) ratio is critical for obtaining films with a dense structure and low OVDs. The film density increased and OVDs decreased when the deposition pressure was increased. The film deposited at high sputtering power showed a denser structure and lower OVDs. Our results suggest that SE and PAS are effective techniques for studying the optical properties of and defects in HfO2 and provide an insight into the fabrication of high-quality HfO2 thin films for optical applications. (C) 2011 Elsevier B.V. All rights reserved. |
| 学科主题 | Materials Science; Physics |
| 类目[WOS] | Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 研究领域[WOS] | Materials Science ; Physics |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000292720000028 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/240072]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Ma, ZW,Liu, LX,Xie, YZ,et al. Spectroscopic ellipsometry and positron annihilation investigation of sputtered HfO2 films[J]. THIN SOLID FILMS,2011,519(19):6349-6353. |
| APA | Ma, ZW.,Liu, LX.,Xie, YZ.,Su, YR.,Zhao, HT.,...&秦秀波.(2011).Spectroscopic ellipsometry and positron annihilation investigation of sputtered HfO2 films.THIN SOLID FILMS,519(19),6349-6353. |
| MLA | Ma, ZW,et al."Spectroscopic ellipsometry and positron annihilation investigation of sputtered HfO2 films".THIN SOLID FILMS 519.19(2011):6349-6353. |
入库方式： OAI收割
来源：高能物理研究所
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