Annealing ambient on the evolution of He-induced voids in silicon
文献类型：期刊论文
| 作者 | Li, BS ; Zhang, CH; Zhong YR(钟玉荣); Wang DN(王丹妮); Zhong, YR; Wang, DN; Zhou, LH; Yang, YT; Zhang, LQ; Zhang, HH
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| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2011 |
| 卷号 | 257期号:16页码:7036-7040 |
| 关键词 | Silicon Positron annihilation Void Annealing ambient TEM |
| 通讯作者 | [Li, B. S. ; Zhang, C. H. ; Yang, Y. T. ; Zhang, L. Q.] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China ; [Li, B. S. ; Zhou, L. H. ; Yang, Y. T. ; Zhang, H. H. ; Zhang, Y. ; Han, L. H.] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China ; [Zhong, Y. R. ; Wang, D. N.] Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China |
| 英文摘要 | The effects of annealing ambient on the He-induced voids in silicon were investigated using the combination of the Doppler broadening spectroscopy using a variable-energy positron beam and cross-section transmission electron microscopy (XTEM). A < 1 0 0 >-oriented silicon wafer was implanted with He ions at an energy of 15 keV to a dose of 2 x 10(16) cm(-2) at room temperature. Post-implantation, the samples were annealed at a temperature of 1000 degrees C in the ambient of vacuum, argon, nitrogen, air and oxygen. Positron annihilation spectroscopy (PAS) spectra varied with the annealing ambient. XTEM micrographs demonstrated that the density of He-induced voids could be influenced by the annealing ambient. (C) 2011 Elsevier B.V. All rights reserved. |
| 学科主题 | Chemistry; Materials Science; Physics |
| 类目[WOS] | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 研究领域[WOS] | Chemistry ; Materials Science ; Physics |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000290015600003 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/240102]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Li, BS,Zhang, CH,Zhong YR,et al. Annealing ambient on the evolution of He-induced voids in silicon[J]. APPLIED SURFACE SCIENCE,2011,257(16):7036-7040. |
| APA | Li, BS.,Zhang, CH.,钟玉荣.,王丹妮.,Zhong, YR.,...&Han, LH.(2011).Annealing ambient on the evolution of He-induced voids in silicon.APPLIED SURFACE SCIENCE,257(16),7036-7040. |
| MLA | Li, BS,et al."Annealing ambient on the evolution of He-induced voids in silicon".APPLIED SURFACE SCIENCE 257.16(2011):7036-7040. |
入库方式： OAI收割
来源：高能物理研究所
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