Electronic Structures and Magnetic Properties of GaN Sheets and Nanoribbons
文献类型：期刊论文
| 作者 | Li HM(李海铭); Li J(李炯); Zhang S(张硕) ; Zhou J(周靖); Zhang LJ(张林娟); Chu WS(储旺盛); Chen DL(陈栋梁); Zhao HF(赵海峰); Wu ZY(吴自玉); Li, HM
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| 刊名 | JOURNAL OF PHYSICAL CHEMISTRY C
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| 出版日期 | 2010 |
| 卷号 | 114期号:26页码:11390-11394 |
| 通讯作者 | [Dai, Jun ; Yang, Jinlong] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China ; [Li, Haiming ; Li, Jiong ; Zhang, Shuo ; Zhou, Jing ; Zhang, Linjuan ; Chu, Wangsheng ; Chen, Dongliang ; Zhao, Haireng ; Wu, Ziyu] Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Radiat Facil, Beijing 100049, Peoples R China ; [Li, Jiong ; Zhang, Shuo] Chinese Acad Sci, Shanghai Synchrotron Radiat Facil, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China ; [Wu, Ziyu] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R China ; [Wu, Ziyu] Chinese Acad Sci, Theoret Phys Ctr Sci Facil, Beijing 100049, Peoples R China |
| 英文摘要 | First principles calculations were performed to study the electronic structures of gallium nitride (GaN) sheets and nanoribbons (NRs) in order to understand the influence of defects or edge states on magnetic properties. It is shown that the Ga-defective GaN sheet may be a good candidate for spintronics due to its half-metal property under certain conditions, even if a perfect GaN sheet is a nonmagnetic semiconductor. We investigated both zigzag and armchair GaN NRs with and without edge atoms passivated by H. The H-passivated GaN NRs and bare armchair NRs can be classified as nonmagnetic semiconductors. Band gap gradually decreases with the increase of the width of NRs. A ferromagnetic character occurs in bare zigzag GaN NRs with width of about 1.7 nm (mainly determined by edge Ga and N). Furthermore, we have shown that thin layer GaN NRs could also be ferromagnetic. Magnetic moment does not decrease to zero even up to six layers. Results offer a deeper understanding of the influence of both defects and edge states of GaN sheets and monolayer and multilayer NRs, particularly in terms of their structural and magnetic properties. |
| 学科主题 | Chemistry; Science & Technology - Other Topics; Materials Science |
| 类目[WOS] | Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
| 研究领域[WOS] | Chemistry ; Science & Technology - Other Topics ; Materials Science |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000279282200008 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/240181]  |
| 专题 | 高能物理研究所_多学科研究中心 高能物理研究所_加速器中心 高能物理研究所_粒子天体物理中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Li HM,Li J,Zhang S,et al. Electronic Structures and Magnetic Properties of GaN Sheets and Nanoribbons[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2010,114(26):11390-11394. |
| APA | 李海铭.,李炯.,张硕.,周靖.,张林娟.,...&Wu, ZY.(2010).Electronic Structures and Magnetic Properties of GaN Sheets and Nanoribbons.JOURNAL OF PHYSICAL CHEMISTRY C,114(26),11390-11394. |
| MLA | 李海铭,et al."Electronic Structures and Magnetic Properties of GaN Sheets and Nanoribbons".JOURNAL OF PHYSICAL CHEMISTRY C 114.26(2010):11390-11394. |
入库方式： OAI收割
来源：高能物理研究所
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