Direct preparation and microstructure investigation of p-type transparent conducting Ga-doped SnO2 thin films
文献类型：期刊论文
| 作者 | Yang TY(杨铁莹); Qin XB(秦秀波) ; Wang HH(王焕华); Jia QJ(贾全杰); Yu RS(于润升); Wang BY(王宝义); Wang JO(王嘉鸥); Kui RX(奎热西); Jiang XM(姜晓明); Yang, TY
|
| 刊名 | POWDER DIFFRACTION
 |
| 出版日期 | 2010 |
| 卷号 | 25期号:3页码:S36-S39 |
| 关键词 | p-type transparent conducting oxide Ga-doped SnO2 thin film reactive rf-magnetron sputtering microstructure X-ray diffraction X-ray specular reflectivity |
| 通讯作者 | [Yang, Tieying ; Qin, Xiubo ; Wang, Huan-hua ; Jia, Quanjie ; Yu, Runsheng ; Wang, Baoyi ; Wang, Jiaou ; Ibrahim, Kurash ; Jiang, Xiaoming] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China |
| 英文摘要 | Transparent p-type conducting Ga-doped SnO2 thin films were prepared using reactive rf-magnetron sputtering. Good p-type conduction was directly realized without the need of postdeposition annealing. The p-type conductivity was found to be very sensitive to the growth condition and process, suggesting that the carrier behavior is strongly related to the fine microstructure of the films. The microstructures of the films were characterized using synchrotron X-ray diffraction and specular reflectivity techniques. The valence state of the Ga dopant was measured from X-ray photoelectron spectra to explain the origin of net holes presented in the films. (C) 2010 International Centre for Diffraction Data. [DOI: 10.1154/1.3478457] |
| 学科主题 | Materials Science |
| 类目[WOS] | Materials Science, Characterization & Testing |
| 研究领域[WOS] | Materials Science |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000282386800010 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/240332]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Yang TY,Qin XB,Wang HH,et al. Direct preparation and microstructure investigation of p-type transparent conducting Ga-doped SnO2 thin films[J]. POWDER DIFFRACTION,2010,25(3):S36-S39. |
| APA | 杨铁莹.,秦秀波.,王焕华.,贾全杰.,于润升.,...&Jiang, XM.(2010).Direct preparation and microstructure investigation of p-type transparent conducting Ga-doped SnO2 thin films.POWDER DIFFRACTION,25(3),S36-S39. |
| MLA | 杨铁莹,et al."Direct preparation and microstructure investigation of p-type transparent conducting Ga-doped SnO2 thin films".POWDER DIFFRACTION 25.3(2010):S36-S39. |
入库方式： OAI收割
来源：高能物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。