Different origins of the yellow luminescence in as-grown high-resistance GaN and unintentional-doped GaN films
文献类型：期刊论文
| 作者 | Xu, FJ; Shen, B; Lu, L; Miao, ZL; Song, J; Yang, ZJ; Zhang, GY; Hao, XP; Wang, BY ; Shen, XQ
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| 刊名 | JOURNAL OF APPLIED PHYSICS
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| 出版日期 | 2010 |
| 卷号 | 107期号:2页码:23528 |
| 关键词 | gallium compounds III-V semiconductors MOCVD photoluminescence positron annihilation vacancies (crystal) wide band gap semiconductors |
| 通讯作者 | [Xu, F. J. ; Shen, B. ; Lu, L. ; Miao, Z. L. ; Song, J. ; Yang, Z. J. ; Zhang, G. Y.] Peking Univ, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China ; [Hao, X. P. ; Wang, B. Y.] Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China ; [Shen, X. Q. ; Okumura, H.] Natl Inst Adv Ind Sci & Technol, Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan |
| 英文摘要 | The yellow luminescence (YL) in as-grown high-resistance (HR) and unintentional-doped (UID) GaN films grown by metal organic chemical vapor deposition has been investigated by means of photoluminescence and monoenergetic positron annihilation spectroscopy. It is found there is stronger YL in UID-GaN with higher concentration of gallium vacancy (V(Ga)), suggesting that V(Ga)-involved defects are the origin responsible for the YL in UID-GaN. Contrastly, there is much stronger YL in HR-GaN that is nearly free from V(Ga), suggesting that there is another origin for the YL in HR-GaN, which is thought as the carbon-involved defects. Furthermore, it is found that the HR-GaN film with shorter positron diffusion length L(d) exhibits stronger YL. It is suggested that the increased wave function overlap of electrons and holes induced by the extremely strong space localization effect of holes deduced from the short L(d) is the vital factor to enhance the YL efficiency in HR-GaN. |
| 学科主题 | Physics |
| 类目[WOS] | Physics, Applied |
| 研究领域[WOS] | Physics |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000274180600051 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/240500]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Xu, FJ,Shen, B,Lu, L,et al. Different origins of the yellow luminescence in as-grown high-resistance GaN and unintentional-doped GaN films[J]. JOURNAL OF APPLIED PHYSICS,2010,107(2):23528. |
| APA | Xu, FJ.,Shen, B.,Lu, L.,Miao, ZL.,Song, J.,...&王宝义.(2010).Different origins of the yellow luminescence in as-grown high-resistance GaN and unintentional-doped GaN films.JOURNAL OF APPLIED PHYSICS,107(2),23528. |
| MLA | Xu, FJ,et al."Different origins of the yellow luminescence in as-grown high-resistance GaN and unintentional-doped GaN films".JOURNAL OF APPLIED PHYSICS 107.2(2010):23528. |
入库方式： OAI收割
来源：高能物理研究所
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