Study of crystalline structure change of annealing-induced self-organization in polymer field-effect transistors
文献类型：期刊论文
| 作者 | Tian, XY; Zhao, SL; Xu, Z; Yao, JF; Zhang, FJ; Jia, QJ ; Chen, Y; Gong, W; Fan, X; Jia QJ(贾全杰)
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| 刊名 | ACTA PHYSICA SINICA
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| 出版日期 | 2011 |
| 卷号 | 60期号:5页码:57201 |
| 关键词 | polymer field-effect transistor synchrotron radiation grazing incident X-ray diffraction self-organization annealing |
| 通讯作者 | [Tian Xue-Yan ; Zhao Su-Ling ; Xu Zheng ; Zhang Fu-Jun ; Gong Wei ; Fan Xing] Beijing Jiaotong Univ, Minist Educ, Key Lab Luminescence & Opt Informat, Inst Optoelect Technol, Beijing 100044, Peoples R China ; [Yao Jiang-Feng] Beijing Asahi Glass Elect Co Ltd, Beijing 100016, Peoples R China ; [Jia Quan-Jie ; Chen Yu] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China |
| 英文摘要 | With the aim of understanding the relationships between polymer self-organization and charge carrier mobility of polymer organic field-effect transistor (OFET), we investigate crystalline microstructure change of annealing-induced self-organization of regioregular poly (3-hexylthiophene) (RR-P3HT) active thin layer in polymer OFET by synchrotron radiation grazing incident X-ray diffraction (GIXRD). The crystalline microstructures of RR-P3HT thin film with different preparation methods (spin-coating and drop-casting) and different concentrations (2.5 mg/ml and 3.5 mg/ml) at various annealing temperatures are studied. These results present that, the crystalline structures of RR-P3HT active layers annealed at 150 degrees C are better and enhanced to charge transport, which tend to pack form the thiophene rings are perpendicular and the pi-pi interchain stacking parallel to the substrate. Furthermore, we find that an appropriate annealing temperature can facilitate the crystal structure of edge-on form, resulting in field-effect mobility enhancement of polymer OFET. |
| 学科主题 | Physics |
| 类目[WOS] | Physics, Multidisciplinary |
| 研究领域[WOS] | Physics |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000291239700097 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/240703]  |
| 专题 | 高能物理研究所_多学科研究中心 高能物理研究所_核技术应用研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Tian, XY,Zhao, SL,Xu, Z,et al. Study of crystalline structure change of annealing-induced self-organization in polymer field-effect transistors[J]. ACTA PHYSICA SINICA,2011,60(5):57201. |
| APA | Tian, XY.,Zhao, SL.,Xu, Z.,Yao, JF.,Zhang, FJ.,...&陈雨.(2011).Study of crystalline structure change of annealing-induced self-organization in polymer field-effect transistors.ACTA PHYSICA SINICA,60(5),57201. |
| MLA | Tian, XY,et al."Study of crystalline structure change of annealing-induced self-organization in polymer field-effect transistors".ACTA PHYSICA SINICA 60.5(2011):57201. |
入库方式： OAI收割
来源：高能物理研究所
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