Direct determination of Mn occupations in Ga1-xMnxN dilute magnetic semiconductors by x-ray absorption near-edge structure spectroscopy
文献类型：期刊论文
| 作者 | Wei, SQ; Yan, WS; Sun, ZH ; Liu, QH; Zhong, WJ; Zhang, XY; Oyanagi, H; Wu, ZY; Wu ZY(吴自玉)
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| 刊名 | APPLIED PHYSICS LETTERS
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| 出版日期 | 2006 |
| 卷号 | 89期号:12页码:121901 |
| 通讯作者 | Univ Sci & Technol China, Natl Synchroton Radiat Lab, Hefei 230029, Peoples R China ; Fudan Univ, Dept Phys, Surface Phys Lab, Natl Key Lab, Shanghai 200433, Peoples R China ; Fudan Univ, Synchroton Radiat Res Ctr, Shanghai 200433, Peoples R China ; Natl Inst Adv Ind Sci & Technol, Photon Res Inst, Tsukuba, Ibaraki 3058568, Japan ; Chinese Acad Sci, Inst High Energy Phys, Beijing Synchroton Radiat Facil, Beijing 100039, Peoples R China |
| 英文摘要 | X-ray absorption near-edge structure (XANES) spectroscopy is used to study the features of occupation sites of Mn dopants in the Ga1-xMnxN dilute magnetic semiconductors (DMSs) with zinc-blende structure. Theoretical XANES spectra are calculated for representative structure models of Mn atoms in the GaN lattice. It is shown that the substitutional Mn in GaN is characterized by a preedge peak at 2.0 eV and a postedge multiple-scattering peak at 29.1 eV. The peaks shift in position and drop in intensity dramatically for the interstitial Mn-I and Mn-Ga-Mn-I dimer, and then disappear completely for Mn clusters. The experimental spectrum of Ga0.990Mn0.010N is almost reproduced by the calculated XANES spectrum of GaMnN with substitutional Mn. (c) 2006 American Institute of Physics. |
| 学科主题 | Physics |
| 类目[WOS] | Physics, Applied |
| 研究领域[WOS] | Physics |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000240680300030 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/240977]  |
| 专题 | 高能物理研究所_多学科研究中心 高能物理研究所_实验物理中心 高能物理研究所_加速器中心 高能物理研究所_计算中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Wei, SQ,Yan, WS,Sun, ZH,et al. Direct determination of Mn occupations in Ga1-xMnxN dilute magnetic semiconductors by x-ray absorption near-edge structure spectroscopy[J]. APPLIED PHYSICS LETTERS,2006,89(12):121901. |
| APA | Wei, SQ.,Yan, WS.,Sun, ZH.,Liu, QH.,Zhong, WJ.,...&吴自玉.(2006).Direct determination of Mn occupations in Ga1-xMnxN dilute magnetic semiconductors by x-ray absorption near-edge structure spectroscopy.APPLIED PHYSICS LETTERS,89(12),121901. |
| MLA | Wei, SQ,et al."Direct determination of Mn occupations in Ga1-xMnxN dilute magnetic semiconductors by x-ray absorption near-edge structure spectroscopy".APPLIED PHYSICS LETTERS 89.12(2006):121901. |
入库方式： OAI收割
来源：高能物理研究所
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