Effects of nitrogen vacancies induced by Mn doping in (Ga,Mn)N films grown by MOCVD
文献类型：期刊论文
| 作者 | Yang, XL; Chen, ZT ; Wang, CD; Huang, S; Fang, H; Zhang, GY; Chen, DL; Yan, WS; Chen DL(陈栋梁)
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| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
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| 出版日期 | 2008 |
| 卷号 | 41期号:12页码:125002 |
| 通讯作者 | [Yang X L ; Chen Z T ; Wang C D ; Huang S ; Fang H ; Zhang G Y] Peking Univ, State Key Lab Artificial Microstruct & Mesoscop P, Sch Phys, Beijing 100871, Peoples R China ; [Chen D L] Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Radiat Facil, Beijing 100049, Peoples R China ; [Yan W S] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Anhui, Peoples R China |
| 英文摘要 | We have investigated the effects of nitrogen vacancies (V(N)) induced by Mn doping on the electronic structure and transport properties of (Ga,Mn)N films grown by metal organic chemical vapour deposition (MOCVD). The significant increase in n-type carrier concentration in the (Ga,Mn)N film is attributed to the additional VN induced by Mn doping. Temperature-dependent Hall data indicate that the additional VN is the dominant scattering mechanism in the (Ga,Mn)N film in higher temperature regions. The Mn L(2,3) x-ray absorption spectra of the (Ga,Mn)N film shows a multiplet structure, indicating that the Mn ions are present mainly in the Mn(2+)(d(5)) states. These can be attributed to the electrons transferring from VN, which is well consistent with the electrical properties. An energy level model involving the charge transfer is proposed to explain the observed electronic structure and transport properties in the system. |
| 学科主题 | Physics |
| 类目[WOS] | Physics, Applied |
| 研究领域[WOS] | Physics |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000256568000007 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/240992]  |
| 专题 | 高能物理研究所_多学科研究中心 中国科学院高能物理研究所 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Yang, XL,Chen, ZT,Wang, CD,et al. Effects of nitrogen vacancies induced by Mn doping in (Ga,Mn)N films grown by MOCVD[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2008,41(12):125002. |
| APA | Yang, XL.,Chen, ZT.,Wang, CD.,Huang, S.,Fang, H.,...&陈栋梁.(2008).Effects of nitrogen vacancies induced by Mn doping in (Ga,Mn)N films grown by MOCVD.JOURNAL OF PHYSICS D-APPLIED PHYSICS,41(12),125002. |
| MLA | Yang, XL,et al."Effects of nitrogen vacancies induced by Mn doping in (Ga,Mn)N films grown by MOCVD".JOURNAL OF PHYSICS D-APPLIED PHYSICS 41.12(2008):125002. |
入库方式： OAI收割
来源：高能物理研究所
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