Interface as the origin of ferromagnetism in cobalt doped ZnO film grown on silicon substrate
文献类型：期刊论文
| 作者 | Yin, ZG; Chen, NF; Li, Y; Zhang, XW; Bai, YM; Chai, CL; Xie, YN ; Zhang, J; Xie YN(谢亚宁); Zhang J(张静)
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| 刊名 | APPLIED PHYSICS LETTERS
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| 出版日期 | 2008 |
| 卷号 | 93期号:14页码:142109 |
| 通讯作者 | [Yin, Z. G. ; Chen, N. F. ; Zhang, X. W. ; Bai, Y. M. ; Chai, C. L.] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China ; [Li, Y.] Univ Puerto Rico, Dept Engn Sci & Mat, Mayaguez, PR 00681 USA ; [Xie, Y. N. ; Zhang, J.] Chinese Acad Sci, Inst High Energy Phys, Lab Synchrotron Radiat, Beijing 100039, Peoples R China |
| 英文摘要 | We have investigated the magnetic properties of Co-doped zinc oxide (ZnO) film deposited on silicon substrate by magnetron sputtering. Co ions have a valence of 2+ and substitute for Zn sites in the lattice. By using a chemical etching method, an extrinsic ferromagnetism was demonstrated. The observed ferromagnetism is neither associated with magnetic precipitates nor with contamination, but originates from the silicon/silicon oxide interface. This interface ferromagnetism is characterized by being temperature independent and by having a parallel magnetic anisotropy. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2989128] |
| 学科主题 | Physics |
| 类目[WOS] | Physics, Applied |
| 研究领域[WOS] | Physics |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000259965400026 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/241000]  |
| 专题 | 高能物理研究所_多学科研究中心 高能物理研究所_实验物理中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Yin, ZG,Chen, NF,Li, Y,et al. Interface as the origin of ferromagnetism in cobalt doped ZnO film grown on silicon substrate[J]. APPLIED PHYSICS LETTERS,2008,93(14):142109. |
| APA | Yin, ZG.,Chen, NF.,Li, Y.,Zhang, XW.,Bai, YM.,...&张静.(2008).Interface as the origin of ferromagnetism in cobalt doped ZnO film grown on silicon substrate.APPLIED PHYSICS LETTERS,93(14),142109. |
| MLA | Yin, ZG,et al."Interface as the origin of ferromagnetism in cobalt doped ZnO film grown on silicon substrate".APPLIED PHYSICS LETTERS 93.14(2008):142109. |
入库方式： OAI收割
来源：高能物理研究所
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