Positron annihilation in (Ga, Mn)N: A study of vacancy-type defects
文献类型：期刊论文
| 作者 | Yang, XL; Zhu, WX; Wang, CD; Fang, H; Yu, TJ; Yang, ZJ; Zhang, GY; Qin, XB ; Yu, RS; Wang, BY
|
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2009 |
| 卷号 | 94期号:15页码:151907 |
| 关键词 | doping profiles Doppler broadening ferromagnetic materials gallium compounds III-V semiconductors magnetic thin films manganese compounds MOCVD positron annihilation semiconductor doping semiconductor thin films semimagnetic semiconductors vacancies (crystal) wide band gap semiconductors |
| 通讯作者 | [Yang, X. L. ; Zhu, W. X. ; Wang, C. D. ; Fang, H. ; Yu, T. J. ; Yang, Z. J. ; Zhang, G. Y.] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China ; [Qin, X. B. ; Yu, R. S. ; Wang, B. Y.] Chinese Acad Sci, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100049, Peoples R China |
| 英文摘要 | The vacancy-type defects in (Ga,Mn)N films grown by metal organic chemical vapor deposition were studied by positron annihilation technique. Doppler broadening spectra were measured for the films. Compared to the undoped GaN film, the positron trapping defects in the (Ga,Mn)N films have been changed to a new type defects and its concentration increases with the increasing Mn concentration. By analyzing the S-W correlation plots and our previous results, we identify this type defects in the (Ga,Mn)N as V(N)-Mn(Ga) complex. This type of defects should be considered when understand the magnetic properties in a real (Ga,Mn)N system. |
| 学科主题 | Physics |
| 类目[WOS] | Physics, Applied |
| 研究领域[WOS] | Physics |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000265285200024 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/241007]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Yang, XL,Zhu, WX,Wang, CD,et al. Positron annihilation in (Ga, Mn)N: A study of vacancy-type defects[J]. APPLIED PHYSICS LETTERS,2009,94(15):151907. |
| APA | Yang, XL.,Zhu, WX.,Wang, CD.,Fang, H.,Yu, TJ.,...&王宝义.(2009).Positron annihilation in (Ga, Mn)N: A study of vacancy-type defects.APPLIED PHYSICS LETTERS,94(15),151907. |
| MLA | Yang, XL,et al."Positron annihilation in (Ga, Mn)N: A study of vacancy-type defects".APPLIED PHYSICS LETTERS 94.15(2009):151907. |
入库方式： OAI收割
来源：高能物理研究所
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