Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy
文献类型：期刊论文
| 作者 | Song, HP; Yang, AL; Wei, HY; Guo, Y ; Zhang, B; Zheng, GL; Yang, SY; Liu, XL; Zhu, QS; Wang, ZG
|
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2009 |
| 卷号 | 94期号:22页码:222114 |
| 关键词 | conduction bands III-V semiconductors indium compounds semiconductor heterojunctions semiconductor materials valence bands X-ray photoelectron spectra |
| 通讯作者 | [Song, H. P. ; Yang, A. L. ; Wei, H. Y. ; Guo, Y. ; Zhang, B. ; Zheng, G. L. ; Yang, S. Y. ; Liu, X. L. ; Zhu, Q. S. ; Wang, Z. G.] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China ; [Yang, T. Y. ; Wang, H. H.] Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Radiat Facil, Beijing 100039, Peoples R China |
| 英文摘要 | In2O3 is a promising partner of InN to form InN/In2O3 heterosystems. The valence band offset (VBO) of wurtzite InN/cubic In2O3 heterojunction is determined by x-ray photoemission spectroscopy. The valence band of In2O3 is found to be 1.47 +/- 0.11 eV below that of InN, and a type-I heterojunction with a conduction band offset (CBO) of 0.49-0.99 eV is found. The accurate determination of the VBO and CBO is important for use of InN/In2O3 based electronic devices. |
| 学科主题 | Physics |
| 类目[WOS] | Physics, Applied |
| 研究领域[WOS] | Physics |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000266674300037 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/241036]  |
| 专题 | 高能物理研究所_多学科研究中心 高能物理研究所_实验物理中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Song, HP,Yang, AL,Wei, HY,et al. Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy[J]. APPLIED PHYSICS LETTERS,2009,94(22):222114. |
| APA | Song, HP.,Yang, AL.,Wei, HY.,Guo, Y.,Zhang, B.,...&王焕华.(2009).Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy.APPLIED PHYSICS LETTERS,94(22),222114. |
| MLA | Song, HP,et al."Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy".APPLIED PHYSICS LETTERS 94.22(2009):222114. |
入库方式： OAI收割
来源：高能物理研究所
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