Electrical conductivity measurements of beta-boron under high pressure and temperature
文献类型:期刊论文
作者 | Zhang, DM; Gao, CX; Ma, YZ; He, CY; Huang, XW; Hao, AM; Yu, CL; Li, YC![]() ![]() |
刊名 | JOURNAL OF PHYSICS-CONDENSED MATTER
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出版日期 | 2007 |
卷号 | 19期号:42页码:425216 |
通讯作者 | Jilin Univ, Inst Atom & Mol Phys, Natl Lab Superhard Mat, Changchun 130012, Peoples R China ; Texas Tech Univ, Dept Mech Engn, Lubbock, TX 79409 USA ; Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Radiat Labs, Beijing 100039, Peoples R China |
英文摘要 | Using a microcircuit fabricated on a diamond anvil cell, we carried out in situ conductivity measurements on beta-boron at pressures up to 28 GPa. The electrical conductivity of the sample increases with increasing pressure, but it does not return to original state when the pressure returns to ambient. As the conductivity gradually increases within a temperature region from 293 to 473 K, two significant different conduction processes are observed. A possible reason for this result is proposed based on the valence band structure. In addition, by laser heating, our experimental result indicates that beta-boron still shows the transport behavior of a semiconductor. |
学科主题 | Physics |
类目[WOS] | Physics, Condensed Matter |
研究领域[WOS] | Physics |
原文出处 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000249987500017 |
源URL | [http://ir.ihep.ac.cn/handle/311005/241064] ![]() |
专题 | 高能物理研究所_多学科研究中心 中国科学院高能物理研究所_科研计划处 |
作者单位 | 中国科学院高能物理研究所 |
推荐引用方式 GB/T 7714 | Zhang, DM,Gao, CX,Ma, YZ,et al. Electrical conductivity measurements of beta-boron under high pressure and temperature[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,2007,19(42):425216. |
APA | Zhang, DM.,Gao, CX.,Ma, YZ.,He, CY.,Huang, XW.,...&刘景.(2007).Electrical conductivity measurements of beta-boron under high pressure and temperature.JOURNAL OF PHYSICS-CONDENSED MATTER,19(42),425216. |
MLA | Zhang, DM,et al."Electrical conductivity measurements of beta-boron under high pressure and temperature".JOURNAL OF PHYSICS-CONDENSED MATTER 19.42(2007):425216. |
入库方式: OAI收割
来源:高能物理研究所
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