Nanopillars by cesium chloride self-assembly and dry etching
文献类型:期刊论文
作者 | Liao YX(廖元勋); Yi FT(伊福廷)![]() ![]() |
刊名 | NANOTECHNOLOGY
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出版日期 | 2010 |
卷号 | 21期号:46页码:465302 |
通讯作者 | [Liao, Y-X ; Yi, F-T] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China |
英文摘要 | We introduce a method combining cesium chloride self-assembly and inductively coupled plasma to fabricate nanopillars with uniform coverage over an entire 4 inch prepatterned silicon wafer. This method can produce pillars with average diameters ranging from 50 nm to 1.5 mu m, aspect ratios up to 13 and coverage ratios above 35%. Cesium chloride self-assembly utilizes the deliquescence of salt, with advantages of excellent tunability, high aspect ratio and potential for micro/nano mixed structures, which makes this technology promising in the areas of MEMS, solar cells, batteries, light emitting diodes, etc. |
学科主题 | Science & Technology - Other Topics; Materials Science; Physics |
类目[WOS] | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied |
研究领域[WOS] | Science & Technology - Other Topics ; Materials Science ; Physics |
原文出处 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000283491000006 |
源URL | [http://ir.ihep.ac.cn/handle/311005/241067] ![]() |
专题 | 高能物理研究所_多学科研究中心 |
作者单位 | 中国科学院高能物理研究所 |
推荐引用方式 GB/T 7714 | Liao YX,Yi FT,Liao, YX,et al. Nanopillars by cesium chloride self-assembly and dry etching[J]. NANOTECHNOLOGY,2010,21(46):465302. |
APA | 廖元勋,伊福廷,Liao, YX,&Yi, FT.(2010).Nanopillars by cesium chloride self-assembly and dry etching.NANOTECHNOLOGY,21(46),465302. |
MLA | 廖元勋,et al."Nanopillars by cesium chloride self-assembly and dry etching".NANOTECHNOLOGY 21.46(2010):465302. |
入库方式: OAI收割
来源:高能物理研究所
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