中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Nanopillars by cesium chloride self-assembly and dry etching

文献类型:期刊论文

作者Liao YX(廖元勋); Yi FT(伊福廷); Liao, YX; Yi, FT
刊名NANOTECHNOLOGY
出版日期2010
卷号21期号:46页码:465302
通讯作者[Liao, Y-X ; Yi, F-T] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
英文摘要We introduce a method combining cesium chloride self-assembly and inductively coupled plasma to fabricate nanopillars with uniform coverage over an entire 4 inch prepatterned silicon wafer. This method can produce pillars with average diameters ranging from 50 nm to 1.5 mu m, aspect ratios up to 13 and coverage ratios above 35%. Cesium chloride self-assembly utilizes the deliquescence of salt, with advantages of excellent tunability, high aspect ratio and potential for micro/nano mixed structures, which makes this technology promising in the areas of MEMS, solar cells, batteries, light emitting diodes, etc.
学科主题Science & Technology - Other Topics; Materials Science; Physics
类目[WOS]Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
研究领域[WOS]Science & Technology - Other Topics ; Materials Science ; Physics
原文出处SCI
语种英语
WOS记录号WOS:000283491000006
源URL[http://ir.ihep.ac.cn/handle/311005/241067]  
专题高能物理研究所_多学科研究中心
作者单位中国科学院高能物理研究所
推荐引用方式
GB/T 7714
Liao YX,Yi FT,Liao, YX,et al. Nanopillars by cesium chloride self-assembly and dry etching[J]. NANOTECHNOLOGY,2010,21(46):465302.
APA 廖元勋,伊福廷,Liao, YX,&Yi, FT.(2010).Nanopillars by cesium chloride self-assembly and dry etching.NANOTECHNOLOGY,21(46),465302.
MLA 廖元勋,et al."Nanopillars by cesium chloride self-assembly and dry etching".NANOTECHNOLOGY 21.46(2010):465302.

入库方式: OAI收割

来源:高能物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。