Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors
文献类型：期刊论文
| 作者 | Zhao, DG; Zhang, S; Liu, WB ; Hao, XP; Jiang, DS; Zhu, JJ; Liu, ZS; Wang, H; Zhang, SM; Yang, H
|
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2010 |
| 卷号 | 19期号:5页码:57802 |
| 关键词 | Ga vacancies MOCVD GaN Schottky barrier photodetector |
| 通讯作者 | [Zhao De-Gang ; Zhang Shuang ; Liu Wen-Bao ; Jiang De-Sheng ; Zhu Jian-Jun ; Liu Zong-Shun ; Wang Hui ; Zhang Shu-Ming ; Yang Hui] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China ; [Hao Xiao-Peng] Natl Inst Metrol, Beijing 100013, Peoples R China ; [Wei Long] Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China |
| 英文摘要 | The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density. It is also found that the density of Ga vacancies in undoped GaN is much lower than in Si-doped GaN. The Ga vacancies may enhance tunneling and reduce effective Schottky barrier height, leading to an increase of leakage current. It suggests that when undoped GaN is used as the active layer, it is necessary to reduce the leakage current of GaN Schottky barrier ultraviolet photodetector. |
| 学科主题 | Physics |
| 类目[WOS] | Physics, Multidisciplinary |
| 研究领域[WOS] | Physics |
| 原文出处 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000277372200084 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/240707]  |
| 专题 | 高能物理研究所_核技术应用研究中心 高能物理研究所_实验物理中心 高能物理研究所_加速器中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Zhao, DG,Zhang, S,Liu, WB,et al. Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors[J]. CHINESE PHYSICS B,2010,19(5):57802. |
| APA | Zhao, DG.,Zhang, S.,Liu, WB.,Hao, XP.,Jiang, DS.,...&魏龙.(2010).Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors.CHINESE PHYSICS B,19(5),57802. |
| MLA | Zhao, DG,et al."Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors".CHINESE PHYSICS B 19.5(2010):57802. |
入库方式： OAI收割
来源：高能物理研究所
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