中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Loss of light yield of doped lead tungstate crystals after irradiation

文献类型:期刊论文

作者He JT(何景堂); Lv YS(吕雨生); Chen DB(陈端保); Li ZH(李祖豪); Bian JG(卞建国); Zhu GY(朱国义); Tang XW(唐孝威); Zheng LR(郑连荣); Chen XH(陈小红); Ren SX(任绍霞)
刊名CHINESE PHYSICS LETTERS
出版日期1999
卷号16期号:10页码:745-746
通讯作者Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China ; Beijing Glass Res Inst, Beijing Inorgan Crystal Lab, Beijing 100062, Peoples R China
英文摘要Loss of light yield of doped lead tungstate crystals after irradiation with a low dose rate has been observed. The La, Pr, and Y doping may improve radiation hardness, whereas Pi or Mo doping is harmful.
学科主题Physics
类目[WOS]Physics, Multidisciplinary
研究领域[WOS]Physics
原文出处SCI
语种英语
WOS记录号WOS:000083261500016
源URL[http://ir.ihep.ac.cn/handle/311005/238412]  
专题高能物理研究所_院士
高能物理研究所_粒子天体物理中心
高能物理研究所_多学科研究中心
作者单位中国科学院高能物理研究所
推荐引用方式
GB/T 7714
He JT,Lv YS,Chen DB,et al. Loss of light yield of doped lead tungstate crystals after irradiation[J]. CHINESE PHYSICS LETTERS,1999,16(10):745-746.
APA 何景堂.,吕雨生.,陈端保.,李祖豪.,卞建国.,...&Ren, SX.(1999).Loss of light yield of doped lead tungstate crystals after irradiation.CHINESE PHYSICS LETTERS,16(10),745-746.
MLA 何景堂,et al."Loss of light yield of doped lead tungstate crystals after irradiation".CHINESE PHYSICS LETTERS 16.10(1999):745-746.

入库方式: OAI收割

来源:高能物理研究所

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