中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
PHOTOCONDUCTION EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE OF GAAS

文献类型:期刊论文

作者Hu TD(胡天斗); Xie YN(谢亚宁); Qiao S(乔山); Hai Y(海洋); Jin YL(靳亚兰); Xian DC(冼鼎昌); HU, TD; XIE, YN; QIAO, S; HAI, Y
刊名PHYSICAL REVIEW B
出版日期1994
卷号50期号:4页码:2216-2220
英文摘要Photoconduction spectra of GaAs samples at photon energies around the Ga and As K edges were measured. Extended x-ray-absorption fine-structure oscillation was observed in these spectra. It is found that the spectrum shape of the photocurrent depends on the sample thickness. A microscopic theory is presented to determine the photoconduction response to x-ray absorption. The theory is in good agreement with experiment.
学科主题Physics
类目[WOS]Physics, Condensed Matter
研究领域[WOS]Physics
原文出处SCI
语种英语
WOS记录号WOS:A1994PA18700022
源URL[http://ir.ihep.ac.cn/handle/311005/239690]  
专题高能物理研究所_院士
高能物理研究所_多学科研究中心
作者单位中国科学院高能物理研究所
推荐引用方式
GB/T 7714
Hu TD,Xie YN,Qiao S,et al. PHOTOCONDUCTION EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE OF GAAS[J]. PHYSICAL REVIEW B,1994,50(4):2216-2220.
APA 胡天斗.,谢亚宁.,乔山.,海洋.,靳亚兰.,...&XIAN, DC.(1994).PHOTOCONDUCTION EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE OF GAAS.PHYSICAL REVIEW B,50(4),2216-2220.
MLA 胡天斗,et al."PHOTOCONDUCTION EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE OF GAAS".PHYSICAL REVIEW B 50.4(1994):2216-2220.

入库方式: OAI收割

来源:高能物理研究所

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