PHOTOCONDUCTION EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE OF GAAS
文献类型:期刊论文
作者 | Hu TD(胡天斗)![]() ![]() ![]() ![]() ![]() ![]() |
刊名 | PHYSICAL REVIEW B
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出版日期 | 1994 |
卷号 | 50期号:4页码:2216-2220 |
英文摘要 | Photoconduction spectra of GaAs samples at photon energies around the Ga and As K edges were measured. Extended x-ray-absorption fine-structure oscillation was observed in these spectra. It is found that the spectrum shape of the photocurrent depends on the sample thickness. A microscopic theory is presented to determine the photoconduction response to x-ray absorption. The theory is in good agreement with experiment. |
学科主题 | Physics |
类目[WOS] | Physics, Condensed Matter |
研究领域[WOS] | Physics |
原文出处 | SCI |
语种 | 英语 |
WOS记录号 | WOS:A1994PA18700022 |
源URL | [http://ir.ihep.ac.cn/handle/311005/239690] ![]() |
专题 | 高能物理研究所_院士 高能物理研究所_多学科研究中心 |
作者单位 | 中国科学院高能物理研究所 |
推荐引用方式 GB/T 7714 | Hu TD,Xie YN,Qiao S,et al. PHOTOCONDUCTION EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE OF GAAS[J]. PHYSICAL REVIEW B,1994,50(4):2216-2220. |
APA | 胡天斗.,谢亚宁.,乔山.,海洋.,靳亚兰.,...&XIAN, DC.(1994).PHOTOCONDUCTION EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE OF GAAS.PHYSICAL REVIEW B,50(4),2216-2220. |
MLA | 胡天斗,et al."PHOTOCONDUCTION EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE OF GAAS".PHYSICAL REVIEW B 50.4(1994):2216-2220. |
入库方式: OAI收割
来源:高能物理研究所
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