Photocarrier Radiometry Investigation of Light-Induced Degradation of Boron-Doped Czochralski-Grown Silicon Without Surface Passivation
文献类型：期刊论文
| 作者 | Wang, Qian1,2; Li, Bincheng1,3 |
| 刊名 | INTERNATIONAL JOURNAL OF THERMOPHYSICS
 |
| 出版日期 | 2016-04-01 |
| 卷号 | 37期号:4 |
| 关键词 | B-O defect Light-induced degradation Photocarrier radiometry Silicon Surface state |
| ISSN号 | 0195-928X |
| 英文摘要 | Light-induced degradation (LID) effects of boron-doped Cz silicon wafers without surface passivation are investigated in details by photocarrier radiometry (PCR). The resistivity of all samples is in the range of 0.006 Omega.cm to 38 Omega.cm. It is found that light-induced changes in surface state occupation have a great effect on LID under illumination. With the increasing contribution of light-induced changes in surface state occupation, the generation rate of the defect decreases. The light-induced changes in surface state occupation and light-induced degradation dominate the temporal behaviors of the excess carrier density of high- and low-resistivity Si wafers, respectively. Moreover, the temporal behaviors of PCR signals of these samples under laser illumination with different powers, energy of photons, and multiple illuminations were also analyzed to understand the light-induced change of material properties. Based on the nonlinear dependence of PCR signal on the excitation power, a theoretical model taking into account both light-induced changes in surface state occupation and LID processes was proposed to explain those temporal behaviors. |
| WOS标题词 | Science & Technology ; Physical Sciences ; Technology |
| 类目[WOS] | Thermodynamics ; Chemistry, Physical ; Mechanics ; Physics, Applied |
| 研究领域[WOS] | Thermodynamics ; Chemistry ; Mechanics ; Physics |
| 关键词[WOS] | WAFERS |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000371792600004 |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/3856]  |
| 专题 | 光电技术研究所_光电技术研究所被WoS收录文章 |
| 作者单位 | 1.Chinese Acad Sci, Inst Opt & Elect, POB 350, Chengdu 610209, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100039, Peoples R China 3.Univ Elect Sci & Technol China, Sch Optoelect Informat, Chengdu 610054, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Qian,Li, Bincheng. Photocarrier Radiometry Investigation of Light-Induced Degradation of Boron-Doped Czochralski-Grown Silicon Without Surface Passivation[J]. INTERNATIONAL JOURNAL OF THERMOPHYSICS,2016,37(4). |
| APA | Wang, Qian,&Li, Bincheng.(2016).Photocarrier Radiometry Investigation of Light-Induced Degradation of Boron-Doped Czochralski-Grown Silicon Without Surface Passivation.INTERNATIONAL JOURNAL OF THERMOPHYSICS,37(4). |
| MLA | Wang, Qian,et al."Photocarrier Radiometry Investigation of Light-Induced Degradation of Boron-Doped Czochralski-Grown Silicon Without Surface Passivation".INTERNATIONAL JOURNAL OF THERMOPHYSICS 37.4(2016). |
入库方式： OAI收割
来源：光电技术研究所
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