Isotropic Growth of Graphene toward Smoothing Stitching
文献类型：期刊论文
| 作者 | Zeng, Mengqi1; Tan, Lifang1; Wang, Lingxiang1; Mendes, Rafael G.2; Qin, Zhihui3; Huang, Yaxin1; Zhang, Tao1; Fang, Liwen1; Zhang, Yanfeng4,5; Yue, Shuanglin6 |
| 刊名 | ACS Nano
 |
| 出版日期 | 2016-07-01 |
| 卷号 | 10期号:7页码:7189-7196 |
| 关键词 | graphene isotropic growth liquid metal smooth stitching |
| 英文摘要 | The quality of graphene grown via chemical vapor deposition still has very great disparity with its theoretical property due to the inevitable formation of grain boundaries. The design of single-crystal substrate with an anisotropic twofold symmetry for the unidirectional alignment of graphene seeds would be a promising way for eliminating the grain boundaries at the wafer scale. However, such a delicate process will be easily terminated by the obstruction of defects or impurities. Here we investigated the isotropic growth behavior of graphene single crystals via melting the growth substrate to obtain an amorphous isotropic surface, which will not offer any specific grain orientation induction or preponderant growth rate toward a certain direction in the graphene growth process. The as-obtained graphene grains are isotropically round with mixed edges that exhibit high activity. The orientation of adjacent grains can be easily self-adjusted to smoothly match each other over a liquid catalyst with facile atom delocalization due to the low rotation steric hindrance of the isotropic grains, thus achieving the smoothing stitching of the adjacent graphene. Therefore, the adverse effects of grain boundaries will be eliminated and the excellent transport performance of graphene will be more guaranteed. What is more, such an isotropic growth mode can be extended to other types of layered nanomaterials such as hexagonal boron nitride and transition metal chalcogenides for obtaining large-size intrinsic film with low defect. |
| WOS标题词 | Science & Technology ; Physical Sciences ; Technology |
| 类目[WOS] | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
| 研究领域[WOS] | Chemistry ; Science & Technology - Other Topics ; Materials Science |
| 关键词[WOS] | CHEMICAL-VAPOR-DEPOSITION ; SINGLE-CRYSTAL GRAPHENE ; RAMAN-SPECTROSCOPY ; COPPER FOILS ; SURFACE ; ORIENTATION ; FILMS ; SHAPE ; MORPHOLOGY ; DOMAINS |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000380576600086 |
| 源URL | [http://ir.wipm.ac.cn/handle/112942/9477]  |
| 专题 | 武汉物理与数学研究所_原子分子光物理研究部 |
| 作者单位 | 1.Wuhan Univ, Coll Chem & Mol Sci, Wuhan 430072, Peoples R China 2.IFW Dresden, D-01069 Dresden, Germany 3.Chinese Acad Sci, Wuhan Inst Phys & Math, State Key Lab Magnet Resonance & Atom & Mol Phys, Wuhan 430071, Peoples R China 4.Peking Univ, Coll Chem & Mol Engn, Ctr Nanochem, Beijing 100871, Peoples R China 5.Peking Univ, Dept Mat Sci & Engn, Coll Engn, Beijing 100871, Peoples R China 6.Peking Univ, Dept Elect, Beijing 100871, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zeng, Mengqi,Tan, Lifang,Wang, Lingxiang,et al. Isotropic Growth of Graphene toward Smoothing Stitching[J]. ACS Nano,2016,10(7):7189-7196. |
| APA | Zeng, Mengqi.,Tan, Lifang.,Wang, Lingxiang.,Mendes, Rafael G..,Qin, Zhihui.,...&Fu, Lei.(2016).Isotropic Growth of Graphene toward Smoothing Stitching.ACS Nano,10(7),7189-7196. |
| MLA | Zeng, Mengqi,et al."Isotropic Growth of Graphene toward Smoothing Stitching".ACS Nano 10.7(2016):7189-7196. |
入库方式： OAI收割
来源：武汉物理与数学研究所
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