Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride
文献类型：期刊论文
| 作者 | Wang, Hongzhe ; Chen, Chao ; Pan, Miao ; Sun, Yiling ; Yang, Xi |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2015 |
| 卷号 | 357页码:1991-1995 |
| ISSN号 | 0169-4332 |
| 公开日期 | 2016-09-18 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/12251]  |
| 专题 | 宁波材料技术与工程研究所_2015专题 |
| 推荐引用方式 GB/T 7714 | Wang, Hongzhe,Chen, Chao,Pan, Miao,et al. Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride[J]. APPLIED SURFACE SCIENCE,2015,357:1991-1995. |
| APA | Wang, Hongzhe,Chen, Chao,Pan, Miao,Sun, Yiling,&Yang, Xi.(2015).Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride.APPLIED SURFACE SCIENCE,357,1991-1995. |
| MLA | Wang, Hongzhe,et al."Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride".APPLIED SURFACE SCIENCE 357(2015):1991-1995. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。