中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters

文献类型:期刊论文

作者Luo, Hao ; Liang, Lingyan ; Cao, Hongtao ; Dai, Mingzhi ; Lu, Yicheng ; Wang, Mei
刊名ACS APPLIED MATERIALS & INTERFACES
出版日期2015
卷号7期号:31页码:17023-17031
ISSN号1944-8244
公开日期2016-09-18
源URL[http://ir.nimte.ac.cn/handle/174433/12384]  
专题宁波材料技术与工程研究所_2015专题
推荐引用方式
GB/T 7714
Luo, Hao,Liang, Lingyan,Cao, Hongtao,et al. Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters[J]. ACS APPLIED MATERIALS & INTERFACES,2015,7(31):17023-17031.
APA Luo, Hao,Liang, Lingyan,Cao, Hongtao,Dai, Mingzhi,Lu, Yicheng,&Wang, Mei.(2015).Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters.ACS APPLIED MATERIALS & INTERFACES,7(31),17023-17031.
MLA Luo, Hao,et al."Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters".ACS APPLIED MATERIALS & INTERFACES 7.31(2015):17023-17031.

入库方式: OAI收割

来源:宁波材料技术与工程研究所

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