Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters
文献类型:期刊论文
作者 | Luo, Hao ; Liang, Lingyan ; Cao, Hongtao ; Dai, Mingzhi ; Lu, Yicheng ; Wang, Mei |
刊名 | ACS APPLIED MATERIALS & INTERFACES
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出版日期 | 2015 |
卷号 | 7期号:31页码:17023-17031 |
ISSN号 | 1944-8244 |
公开日期 | 2016-09-18 |
源URL | [http://ir.nimte.ac.cn/handle/174433/12384] ![]() |
专题 | 宁波材料技术与工程研究所_2015专题 |
推荐引用方式 GB/T 7714 | Luo, Hao,Liang, Lingyan,Cao, Hongtao,et al. Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters[J]. ACS APPLIED MATERIALS & INTERFACES,2015,7(31):17023-17031. |
APA | Luo, Hao,Liang, Lingyan,Cao, Hongtao,Dai, Mingzhi,Lu, Yicheng,&Wang, Mei.(2015).Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters.ACS APPLIED MATERIALS & INTERFACES,7(31),17023-17031. |
MLA | Luo, Hao,et al."Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters".ACS APPLIED MATERIALS & INTERFACES 7.31(2015):17023-17031. |
入库方式: OAI收割
来源:宁波材料技术与工程研究所
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