Effect of hydrogen-ion energy on structure of a-Si:H thin films prepared by ion-beam-assisted sputtering
文献类型：期刊论文
| 作者 | Huang, Junjun ; Wang, Weiyan ; Fang, Xuyang ; Huang, Jinhua ; Tan, Ruiqin ; Song, Weijie |
| 刊名 | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
 |
| 出版日期 | 2015 |
| 卷号 | 26期号:7页码:4888-4893 |
| ISSN号 | 0957-4522 |
| 公开日期 | 2016-09-18 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/12427]  |
| 专题 | 宁波材料技术与工程研究所_2015专题 |
| 推荐引用方式 GB/T 7714 | Huang, Junjun,Wang, Weiyan,Fang, Xuyang,et al. Effect of hydrogen-ion energy on structure of a-Si:H thin films prepared by ion-beam-assisted sputtering[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2015,26(7):4888-4893. |
| APA | Huang, Junjun,Wang, Weiyan,Fang, Xuyang,Huang, Jinhua,Tan, Ruiqin,&Song, Weijie.(2015).Effect of hydrogen-ion energy on structure of a-Si:H thin films prepared by ion-beam-assisted sputtering.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,26(7),4888-4893. |
| MLA | Huang, Junjun,et al."Effect of hydrogen-ion energy on structure of a-Si:H thin films prepared by ion-beam-assisted sputtering".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 26.7(2015):4888-4893. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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