中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
2D Nanovaristors at Grain Boundaries Account for Memristive Switching in Polycrystalline BiFeO3

文献类型:期刊论文

作者Shen, Xiao ; Yin, Kuibo ; Puzyrev, Yevgeniy S. ; Liu, Yiwei ; Sun, Litao ; Li, Run-Wei ; Pantelides, Sokrates T.
刊名ADVANCED ELECTRONIC MATERIALS
出版日期2015
卷号1期号:5页码:-
ISSN号2199-160X
公开日期2016-09-18
源URL[http://ir.nimte.ac.cn/handle/174433/12499]  
专题宁波材料技术与工程研究所_2015专题
推荐引用方式
GB/T 7714
Shen, Xiao,Yin, Kuibo,Puzyrev, Yevgeniy S.,et al. 2D Nanovaristors at Grain Boundaries Account for Memristive Switching in Polycrystalline BiFeO3[J]. ADVANCED ELECTRONIC MATERIALS,2015,1(5):-.
APA Shen, Xiao.,Yin, Kuibo.,Puzyrev, Yevgeniy S..,Liu, Yiwei.,Sun, Litao.,...&Pantelides, Sokrates T..(2015).2D Nanovaristors at Grain Boundaries Account for Memristive Switching in Polycrystalline BiFeO3.ADVANCED ELECTRONIC MATERIALS,1(5),-.
MLA Shen, Xiao,et al."2D Nanovaristors at Grain Boundaries Account for Memristive Switching in Polycrystalline BiFeO3".ADVANCED ELECTRONIC MATERIALS 1.5(2015):-.

入库方式: OAI收割

来源:宁波材料技术与工程研究所

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