The feasibility of Sn, In, or Al doped ZnSb thin film as candidates for phase change material
文献类型：期刊论文
| 作者 | Chen, Yimin ; Shen, Xiang ; Wang, Guoxiang ; Xu, Tiefeng ; Wang, Rongping ; Dai, Shixun ; Nie, Qiuhua |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2016 |
| 卷号 | 120期号:1 |
| ISSN号 | 0021-8979 |
| 公开日期 | 2016-09-18 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/12924]  |
| 专题 | 宁波材料技术与工程研究所_2016专题 |
| 推荐引用方式 GB/T 7714 | Chen, Yimin,Shen, Xiang,Wang, Guoxiang,et al. The feasibility of Sn, In, or Al doped ZnSb thin film as candidates for phase change material[J]. JOURNAL OF APPLIED PHYSICS,2016,120(1). |
| APA | Chen, Yimin.,Shen, Xiang.,Wang, Guoxiang.,Xu, Tiefeng.,Wang, Rongping.,...&Nie, Qiuhua.(2016).The feasibility of Sn, In, or Al doped ZnSb thin film as candidates for phase change material.JOURNAL OF APPLIED PHYSICS,120(1). |
| MLA | Chen, Yimin,et al."The feasibility of Sn, In, or Al doped ZnSb thin film as candidates for phase change material".JOURNAL OF APPLIED PHYSICS 120.1(2016). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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