中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Dopamine Detection Based on Low-Voltage Oxide Homojunction Electric-Double-Layer Thin-Film Transistors

文献类型:期刊论文

作者Liu, Yanghui ; Li, Bingjun ; Zhu, Liqiang ; Feng, Ping ; Shi, Yi ; Wan, Qing
刊名IEEE ELECTRON DEVICE LETTERS
出版日期2016
卷号37期号:6页码:778-781
ISSN号0741-3106
公开日期2016-09-18
源URL[http://ir.nimte.ac.cn/handle/174433/12962]  
专题宁波材料技术与工程研究所_2016专题
推荐引用方式
GB/T 7714
Liu, Yanghui,Li, Bingjun,Zhu, Liqiang,et al. Dopamine Detection Based on Low-Voltage Oxide Homojunction Electric-Double-Layer Thin-Film Transistors[J]. IEEE ELECTRON DEVICE LETTERS,2016,37(6):778-781.
APA Liu, Yanghui,Li, Bingjun,Zhu, Liqiang,Feng, Ping,Shi, Yi,&Wan, Qing.(2016).Dopamine Detection Based on Low-Voltage Oxide Homojunction Electric-Double-Layer Thin-Film Transistors.IEEE ELECTRON DEVICE LETTERS,37(6),778-781.
MLA Liu, Yanghui,et al."Dopamine Detection Based on Low-Voltage Oxide Homojunction Electric-Double-Layer Thin-Film Transistors".IEEE ELECTRON DEVICE LETTERS 37.6(2016):778-781.

入库方式: OAI收割

来源:宁波材料技术与工程研究所

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