中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Convertible resistive switching characteristics between memory switching and threshold switching in a single ferritin-based memristor

文献类型:期刊论文

作者Zhang, Chaochao ; Shang, Jie ; Xue, Wuhong ; Tan, Hongwei ; Pan, Liang ; Yang, Xi ; Guo, Shanshan ; Hao, Jian ; Liu, Gang ; Li, Run-Wei
刊名CHEMICAL COMMUNICATIONS
出版日期2016
卷号52期号:26页码:4828-4831
ISSN号1359-7345
公开日期2016-09-18
源URL[http://ir.nimte.ac.cn/handle/174433/13234]  
专题宁波材料技术与工程研究所_2016专题
推荐引用方式
GB/T 7714
Zhang, Chaochao,Shang, Jie,Xue, Wuhong,et al. Convertible resistive switching characteristics between memory switching and threshold switching in a single ferritin-based memristor[J]. CHEMICAL COMMUNICATIONS,2016,52(26):4828-4831.
APA Zhang, Chaochao.,Shang, Jie.,Xue, Wuhong.,Tan, Hongwei.,Pan, Liang.,...&Li, Run-Wei.(2016).Convertible resistive switching characteristics between memory switching and threshold switching in a single ferritin-based memristor.CHEMICAL COMMUNICATIONS,52(26),4828-4831.
MLA Zhang, Chaochao,et al."Convertible resistive switching characteristics between memory switching and threshold switching in a single ferritin-based memristor".CHEMICAL COMMUNICATIONS 52.26(2016):4828-4831.

入库方式: OAI收割

来源:宁波材料技术与工程研究所

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