Measurement of core level and band offsets at the interface of ITO/Hg3In2Te6(110) heterojunction by synchrotron radiation photoelectron spectroscopy
文献类型：期刊论文
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| 作者 | Li, YP; Fu, L; Sun, J; Ibrahim, K; Wang, JO; Kui RX(奎热西); Wang JO(王嘉欧) |
| 刊名 | JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
 ; JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
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| 出版日期 | 2016 ; 2016 |
| 卷号 | 207页码:24-28 |
| 关键词 | ITO/Hg3In2Te6(110) heterojunctions Band offsets Core level Synchrotron radiation photoelectron spectroscopy |
| ISSN号 | 0368-2048 |
| DOI | 10.1016/j.elspec.2015.11.017 |
| 文献子类 | Article |
| 英文摘要 | The Indium Tin Oxide (ITO) film was deposited on the surface of Hg3In2Te6 (short for MIT) (1 10) for the fabrication of ITO/MIT(1 1 0) heterojunction by using the pulsed laser deposition method. In situ X-ray photoelectron spectroscopy was utilized to examine the band offsets and core level of ITO/MIT(1 1 0) heterojunctions. The result showed that the valence band maximum of ITO films and MIT(1 1 0) were 1.6 eV and 0.6 eV, respectively. Meanwhile, it was found that the binding energy of Te 3d, Sn 3d and Hg 4f remained unchanged during the ITO deposition process. However, the binding energy of 0 is and In 3d(5/2) increased about 0.3 eV and 0.2 eV, respectively, with the thickness increasing of ITO film from 3.5 nm to 5 nm. This may due to the elements diffusion at the interface region during the film growing process. According to the core level spectrum, it can be speculated that no significant chemical reaction occurred at the interface of ITO/MIT(1 1 0). In addition, the valence band offset of the ITO/MIT(1 1 0) heterojunction can be calculated to be -1 +/- 10.15 eV by the means of the photoelectron spectroscopy methods. The conduction band offset is deduced to be -3.96 +/- 0.15 eV from the known valence band offset value, indicating that the band offsets of ITO/MIT(1 1 0) heterojunction is a type-II band alignment. (C) 2015 Elsevier B.V. All rights reserved. |
| 电子版国际标准刊号 | 1873-2526 |
| 语种 | 英语 ; 英语 |
| WOS记录号 | WOS:000371940400005 ; WOS:000371940400005 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/247915]  |
| 专题 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Li, YP,Fu, L,Sun, J,et al. Measurement of core level and band offsets at the interface of ITO/Hg3In2Te6(110) heterojunction by synchrotron radiation photoelectron spectroscopy, Measurement of core level and band offsets at the interface of ITO/Hg3In2Te6(110) heterojunction by synchrotron radiation photoelectron spectroscopy[J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA,2016, 2016,207, 207:24-28. |
| APA | Li, YP.,Fu, L.,Sun, J.,Ibrahim, K.,Wang, JO.,...&王嘉欧.(2016).Measurement of core level and band offsets at the interface of ITO/Hg3In2Te6(110) heterojunction by synchrotron radiation photoelectron spectroscopy.JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA,207,24-28. |
| MLA | Li, YP,et al."Measurement of core level and band offsets at the interface of ITO/Hg3In2Te6(110) heterojunction by synchrotron radiation photoelectron spectroscopy".JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA 207(2016):24-28. |
入库方式： OAI收割
来源：高能物理研究所
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