Overcoming the Problem of Electrical Contact to Solar Cells Fabricated using Selective-Area Silicon Nanopillars by Cesium Chloride Self-Assembly Lithography as Antireflective Layer
文献类型：期刊论文
| 作者 | Liu J(刘静) ; Zhang XS(张新帅); Sun GJ(孙钢杰); Wang YT(王雨婷); Wang B(王波); Zhang TC(张天冲); Yi FT(伊福廷); Liu, J; Zhang, XS; Sun, GJ
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| 刊名 | ENERGY TECHNOLOGY
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| 出版日期 | 2016 |
| 卷号 | 4期号:2 |
| 语种 | 英语 |
| WOS记录号 | WOS:000371149900008 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/247960]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 推荐引用方式 GB/T 7714 | Liu J,Zhang XS,Sun GJ,et al. Overcoming the Problem of Electrical Contact to Solar Cells Fabricated using Selective-Area Silicon Nanopillars by Cesium Chloride Self-Assembly Lithography as Antireflective Layer[J]. ENERGY TECHNOLOGY,2016,4(2). |
| APA | 刘静.,张新帅.,孙钢杰.,王雨婷.,王波.,...&Chen, F.(2016).Overcoming the Problem of Electrical Contact to Solar Cells Fabricated using Selective-Area Silicon Nanopillars by Cesium Chloride Self-Assembly Lithography as Antireflective Layer.ENERGY TECHNOLOGY,4(2). |
| MLA | 刘静,et al."Overcoming the Problem of Electrical Contact to Solar Cells Fabricated using Selective-Area Silicon Nanopillars by Cesium Chloride Self-Assembly Lithography as Antireflective Layer".ENERGY TECHNOLOGY 4.2(2016). |
入库方式： OAI收割
来源：高能物理研究所
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