Fabrication of CuInS2-Sensitized Solar Cells via an Improved SILAR Process and Its Interface Electron Recombination
文献类型：期刊论文
| 作者 | Xu, Xueqing1,2 ; Wan, Qingcui1,2; Luan, Chunyan3,4; Mei, Fengjiao1; Zhao, Qian1,2; An, Ping1,2; Liang, Zhurong1,2; Xu, Gang1,2; Zapien, Juan Antonio3,4
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| 刊名 | acs applied materials & interfaces
 |
| 出版日期 | 2013-11-13 |
| 卷号 | 5期号:21页码:10605-10613 |
| 关键词 | CuInS2 sensitized solar cells fabrication successive ionic layer absorption and reaction (SILAR) electron recombination |
| 英文摘要 | tetragonal cuins2 (cis) has been successfully deposited onto mesoporous tio2 films by in-sequence growth of inxs and cuys via a successive ionic layer absorption and reaction (silar) process and postdeposition annealing in sulfur ambiance. x-ray diffraction and raman measurements showed that the obtained tetragonal cis consisted of a chalcopyrite phase and cu-au ordering, which related with the antisite defect states. for a fixed cu-s deposition cycle, an interface layer of beta-in2s3 formed at the tio2/cis interface with suitable excess deposition of in s. in the meantime, the content of the cu-au ordering phase decreased to a reasonable level. these facts resulted in the retardance of electron recombination in the cells, which is proposed to be dominated by electron transfer from the conduction band of tio2 to the unoccupied defect states in cis via exponentially distributed surface states. as a result, a relatively high efficiency of similar to 0.92% (v-oc, = 0.35 v, j(sc) = 8.49 ma cm(-2), and ff = 0.31) has been obtained. last, but not least, with an overloading of the sensitizers, a decrease in the interface area between the sensitized tio2 and electrolytes resulted in deceleration of hole extraction from cis to the electrolytes, leading to a decrease in the fill factor of the solar cells. it is indicated that the unoccupied states in cis with energy levels below e-f0 of the tio2 films play an important role in the interface electron recombination at low potentials and has a great influence on the fill factor of the solar cells. |
| WOS标题词 | science & technology ; technology |
| 类目[WOS] | nanoscience & nanotechnology ; materials science, multidisciplinary |
| 研究领域[WOS] | science & technology - other topics ; materials science |
| 关键词[WOS] | thin-films ; impedance spectroscopy ; optical-properties ; charge-transfer ; quantum dots ; cuins2 ; semiconductor ; nanocrystals ; cds |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000327103500028 |
| 源URL | [http://ir.giec.ac.cn/handle/344007/10082]  |
| 专题 | 中国科学院广州能源研究所 |
| 作者单位 | 1.Chinese Acad Sci, Guangzhou Inst Energy Convers, CAS Key Lab Renewable Energy, Guangzhou 510640, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.City Univ Hong Kong, Dept Phys & Mat Sci, New Kowloon, Hong Kong, Peoples R China 4.City Univ Hong Kong, Ctr Funct Photon, New Kowloon, Hong Kong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xu, Xueqing,Wan, Qingcui,Luan, Chunyan,et al. Fabrication of CuInS2-Sensitized Solar Cells via an Improved SILAR Process and Its Interface Electron Recombination[J]. acs applied materials & interfaces,2013,5(21):10605-10613. |
| APA | Xu, Xueqing.,Wan, Qingcui.,Luan, Chunyan.,Mei, Fengjiao.,Zhao, Qian.,...&Zapien, Juan Antonio.(2013).Fabrication of CuInS2-Sensitized Solar Cells via an Improved SILAR Process and Its Interface Electron Recombination.acs applied materials & interfaces,5(21),10605-10613. |
| MLA | Xu, Xueqing,et al."Fabrication of CuInS2-Sensitized Solar Cells via an Improved SILAR Process and Its Interface Electron Recombination".acs applied materials & interfaces 5.21(2013):10605-10613. |
入库方式： OAI收割
来源：广州能源研究所
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