Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition
文献类型：期刊论文
| 作者 | Ai, B; Shen, H; Liang, ZC; Chen, Z; Kong, GL; Liao, XB |
| 刊名 | thin solid films
 |
| 出版日期 | 2006-02-21 |
| 卷号 | 497期号:1-2页码:157-162 |
| 关键词 | chemical vapour deposition electrical properties and measurements scanning electron microscopy polycrystalline silicon |
| 英文摘要 | in this paper, about 30 mu m thick b-doped polycrystalline silicon (poly-si) thin films were deposited on quartz substrates, n-type single crystalline silicon wafers and p(++)-type poly-si ribbons by a rapid thermal chemical vapour deposition system in a temperature range from 1000 to 1150 degrees c. activation energy measurement and room temperature/temperature dependent hall effect measurement were performed on the poly-si thin films prepared on the former two kinds of substrates, respectively. it seems that the electrical properties of as-prepared poly-si thin films could be qualitatively explained by seto's grain boundary (gb) trapping theory although there is a big difference between our samples and seto's in gain size and film thickness etc. the experimental results reconfirm that gb itself is a kind of most effective recombination center with trapping level near the midgap and trapping state density in the order of 1012 cm(-2) magnitude. electron beam induced current measurements on the poly-si thin films prepared on the poly-si ribbons also show that severe recombination occurs at the positions of gbs. (c) 2005 elsevier b.v all rights reserved. |
| WOS标题词 | science & technology ; technology ; physical sciences |
| 类目[WOS] | materials science, multidisciplinary ; materials science, coatings & films ; physics, applied ; physics, condensed matter |
| 研究领域[WOS] | materials science ; physics |
| 关键词[WOS] | grain-boundaries ; states |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000234957300025 |
| 源URL | [http://ir.giec.ac.cn/handle/344007/10259]  |
| 专题 | 中国科学院广州能源研究所 |
| 作者单位 | 1.Sun Yat Sen Univ, Energy Engn Acad, Inst Solar Energy Syst, Guangzhou 510275, Peoples R China 2.Chinese Acad Sci, Guangzhou Inst Energy Convers, Solar Energy Lab, Guangzhou 510640, Peoples R China 3.Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ai, B,Shen, H,Liang, ZC,et al. Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition[J]. thin solid films,2006,497(1-2):157-162. |
| APA | Ai, B,Shen, H,Liang, ZC,Chen, Z,Kong, GL,&Liao, XB.(2006).Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition.thin solid films,497(1-2),157-162. |
| MLA | Ai, B,et al."Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition".thin solid films 497.1-2(2006):157-162. |
入库方式： OAI收割
来源：广州能源研究所
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