Design of X-band GaAs power amplifier
文献类型：会议论文
| 作者 | Xu, Hui; Li, Mimi; Xie, Yifang; Huang, Yonghui |
| 出版日期 | 2015 |
| 会议名称 | 6th IEEE International Symposium on Microwave, Antenna, Propagation, and EMC Technologies, MAPE 2015 |
| 会议日期 | October 28, 2015 - October 30, 2015 |
| 会议地点 | Shanghai, China |
| 页码 | 521-524 |
| 英文摘要 | This paper proposes a design of X-band GaAs power amplifier with the technology of external impedance matching. According to the scattering parameter (S parameter) of field effect tube (FET) provided by manufacturer, the matching circuit and direct current (DC) bias circuit of power amplifier can be designed. The advantage of this method is that the work frequency, efficiency, gain and output power can be designed according to the actual situation by engineers autonomously. In addition, the method has the advantages of low cost and high efficiency. Simulation and practical measured data show that, when the center frequency is 8.2 GHz, the small signal gain is 8.1 dB, and the maximum output power is 31.25 dBm and the maximum power added efficiency (PAE) is 33.62 %. © 2015 IEEE. |
| 收录类别 | EI |
| 会议录 | 2015 IEEE 6th International Symposium on Microwave, Antenna, Propagation, and EMC Technologies, MAPE 2015
 |
| 会议录出版者 | Institute of Electrical and Electronics Engineers Inc. |
| 语种 | 英语 |
| ISBN号 | 9781467374415 |
| 源URL | [http://ir.nssc.ac.cn/handle/122/5559]  |
| 专题 | 国家空间科学中心_空间技术部 |
| 推荐引用方式 GB/T 7714 | Xu, Hui,Li, Mimi,Xie, Yifang,et al. Design of X-band GaAs power amplifier[C]. 见:6th IEEE International Symposium on Microwave, Antenna, Propagation, and EMC Technologies, MAPE 2015. Shanghai, China. October 28, 2015 - October 30, 2015. |
入库方式： OAI收割
来源：国家空间科学中心
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