Infrared Spectroscopic Ellipsometry for Ion-Implanted Silicon Wafers
文献类型：期刊论文
| 作者 | Bincheng Li; and Xianming Liu |
| 刊名 | Crystallinf Silicon
 |
| 出版日期 | 2011 |
| 页码 | 105-120 |
| 通讯作者 | Bincheng Li |
| 中文摘要 | The optical properties of the ion-implanted and annealed silicon wafer in visible spectral range are close to the single crystalline silicon due to the annealing-induced recrystallization, resulting in the unavailability of normal visible spectroscopic ellipsometry (SE) measurements. In this study, the SE measurements are performed in infrared range (2-20 μm) to characterize the implanted and annealed wafers. An optical model based on the classical Drude free-carrier absorption equation is developed, with which the impurity concentration profile, resistivity, mobility of the carriers, and the dispersion relations of the implanted layer are determined. The relationships between these parameters and the implantation dose are also analyzed. The results suggest that the infrared SE is an effective method to characterize the annealed silicon wafers. Longer wavelength shou]d be used to distinguish lower impurity concentration. |
| 英文摘要 | The optical properties of the ion-implanted and annealed silicon wafer in visible spectral range are close to the single crystalline silicon due to the annealing-induced recrystallization, resulting in the unavailability of normal visible spectroscopic ellipsometry (SE) measurements. In this study, the SE measurements are performed in infrared range (2-20 μm) to characterize the implanted and annealed wafers. An optical model based on the classical Drude free-carrier absorption equation is developed, with which the impurity concentration profile, resistivity, mobility of the carriers, and the dispersion relations of the implanted layer are determined. The relationships between these parameters and the implantation dose are also analyzed. The results suggest that the infrared SE is an effective method to characterize the annealed silicon wafers. Longer wavelength shou]d be used to distinguish lower impurity concentration. |
| 语种 | 英语 |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/6591]  |
| 专题 | 光电技术研究所_薄膜光学技术研究室（十一室） |
| 作者单位 | 中国科学院光电技术研究所 |
| 推荐引用方式 GB/T 7714 | Bincheng Li,and Xianming Liu. Infrared Spectroscopic Ellipsometry for Ion-Implanted Silicon Wafers[J]. Crystallinf Silicon,2011:105-120. |
| APA | Bincheng Li,&and Xianming Liu.(2011).Infrared Spectroscopic Ellipsometry for Ion-Implanted Silicon Wafers.Crystallinf Silicon,105-120. |
| MLA | Bincheng Li,et al."Infrared Spectroscopic Ellipsometry for Ion-Implanted Silicon Wafers".Crystallinf Silicon (2011):105-120. |
入库方式： OAI收割
来源：光电技术研究所
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