Refractive index inhomogeneity of LaF3 film at deep ultraviolet wavelength
文献类型：期刊论文
| 作者 | Lin, Dawei1; Guo, Chun1,2; Li, Bincheng1 |
| 刊名 | Chinese Optics Letters
 |
| 出版日期 | 2013 |
| 卷号 | 11期号:SUPPL.1页码:S10602 |
| ISSN号 | 16717694 |
| 通讯作者 | Li, B. (bcli@ioe.ac.cn) |
| 中文摘要 | It is well known that the optical property of an optical thin film can be influenced by even small inhomogeneity of refractive index (RI). In order to investigate the RI inhomogeneity of LaF3 single layer in deep ultraviolet (DUV) range, single-layer LaF3 samples deposited on fused silica and CaF2 substrates are prepared by resistive heating evaporation at different deposition temperatures. The reflectance and transmittance spectra of LaF3 film samples are measured with a spectrophotometer, and used to calculate the RI inhomogeneity. The experimental results show that no RI inhomogeneity of LaF3 film is observed when deposited on CaF2 substrate, while negative RI inhomogeneity is presented when deposited on fused silica substrate. The level of inhomogeneity is affected by the substrate temperature, which decreases with the increasing substrate temperature from 250 to 400°C. © 2013 Chinese Optics Letters. |
| 英文摘要 | It is well known that the optical property of an optical thin film can be influenced by even small inhomogeneity of refractive index (RI). In order to investigate the RI inhomogeneity of LaF3 single layer in deep ultraviolet (DUV) range, single-layer LaF3 samples deposited on fused silica and CaF2 substrates are prepared by resistive heating evaporation at different deposition temperatures. The reflectance and transmittance spectra of LaF3 film samples are measured with a spectrophotometer, and used to calculate the RI inhomogeneity. The experimental results show that no RI inhomogeneity of LaF3 film is observed when deposited on CaF2 substrate, while negative RI inhomogeneity is presented when deposited on fused silica substrate. The level of inhomogeneity is affected by the substrate temperature, which decreases with the increasing substrate temperature from 250 to 400°C. © 2013 Chinese Optics Letters. |
| 学科主题 | Refractive index - Resistive evaporation |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000209349900041 |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/6616]  |
| 专题 | 光电技术研究所_薄膜光学技术研究室（十一室） |
| 作者单位 | 1.Institude of Optics and Electrics, Chinese Academy of Sciences, Chengdu 610209, China 2.University of the Chinese Academy of Sciences, Beijing 100039, China |
| 推荐引用方式 GB/T 7714 | Lin, Dawei,Guo, Chun,Li, Bincheng. Refractive index inhomogeneity of LaF3 film at deep ultraviolet wavelength[J]. Chinese Optics Letters,2013,11(SUPPL.1):S10602. |
| APA | Lin, Dawei,Guo, Chun,&Li, Bincheng.(2013).Refractive index inhomogeneity of LaF3 film at deep ultraviolet wavelength.Chinese Optics Letters,11(SUPPL.1),S10602. |
| MLA | Lin, Dawei,et al."Refractive index inhomogeneity of LaF3 film at deep ultraviolet wavelength".Chinese Optics Letters 11.SUPPL.1(2013):S10602. |
入库方式： OAI收割
来源：光电技术研究所
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