Three-dimensional transient model for time-domain free-carrier absorption measurement of excess carriers in silicon wafers
文献类型：期刊论文
| 作者 | Ren, Shengdong1,2; Li, Bincheng1; Huang, Qiuping1,2 |
| 刊名 | Journal of Applied Physics
 |
| 出版日期 | 2013 |
| 卷号 | 114期号:24页码:243702 |
| ISSN号 | 00218979 |
| 中文摘要 | A three-dimensional transient model for time-domain (modulated) free-carrier absorption (FCA) measurement was developed to describe the transport dynamics of photo-generated excess carriers in silicon (Si) wafers. With the developed transient model, numerical simulations were performed to investigate the dependences of the waveforms of the transient FCA signals on the electronic transport parameters of Si wafers and the geometric parameters of the FCA experiment. Experimental waveforms of FCA signals of both n-and p-type Si wafers with resistivity ranging 1-38 Ω·cm were then fitted to the three-dimensional transient model to extract simultaneously and unambiguously the transport parameters of Si wafers, namely, the carrier lifetime, the carrier diffusion coefficient, and the front surface recombination velocity via multi-parameter fitting. A basic agreement between the extracted parameter values and the literature values was obtained. © 2013 AIP Publishing LLC. |
| 英文摘要 | A three-dimensional transient model for time-domain (modulated) free-carrier absorption (FCA) measurement was developed to describe the transport dynamics of photo-generated excess carriers in silicon (Si) wafers. With the developed transient model, numerical simulations were performed to investigate the dependences of the waveforms of the transient FCA signals on the electronic transport parameters of Si wafers and the geometric parameters of the FCA experiment. Experimental waveforms of FCA signals of both n-and p-type Si wafers with resistivity ranging 1-38 Ω·cm were then fitted to the three-dimensional transient model to extract simultaneously and unambiguously the transport parameters of Si wafers, namely, the carrier lifetime, the carrier diffusion coefficient, and the front surface recombination velocity via multi-parameter fitting. A basic agreement between the extracted parameter values and the literature values was obtained. © 2013 AIP Publishing LLC. |
| 学科主题 | Diffusion - Silicon - Silicon solar cells - Three dimensional |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000329173200029 |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/6619]  |
| 专题 | 光电技术研究所_薄膜光学技术研究室（十一室） |
| 作者单位 | 1.Institute of Optics and Electronics, Chinese Academy of Sciences, P.O. Box 350, Shuangliu, Chengdu, Sichuan 610209, China 2.University of the Chinese Academy of Sciences, Beijing 100039, China |
| 推荐引用方式 GB/T 7714 | Ren, Shengdong,Li, Bincheng,Huang, Qiuping. Three-dimensional transient model for time-domain free-carrier absorption measurement of excess carriers in silicon wafers[J]. Journal of Applied Physics,2013,114(24):243702. |
| APA | Ren, Shengdong,Li, Bincheng,&Huang, Qiuping.(2013).Three-dimensional transient model for time-domain free-carrier absorption measurement of excess carriers in silicon wafers.Journal of Applied Physics,114(24),243702. |
| MLA | Ren, Shengdong,et al."Three-dimensional transient model for time-domain free-carrier absorption measurement of excess carriers in silicon wafers".Journal of Applied Physics 114.24(2013):243702. |
入库方式： OAI收割
来源：光电技术研究所
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